Submicron Ferroelectric Capacitors Fabricated by Chemical Mechanical Polishing Process for High-Density Ferroelectric Memories

Abstract

Capacitance-voltage characteristics have been obtained for Schottky barrier diodes, formed on polished surfaces of natural p-type semiconducting diamond, before and after illumination with radiation capable of neutralizing ionized donors in the depletion layer. Plots of 1/Cz versus Vfor the two cases have yielded values for both the acceptor concentration N A and the donor concentration N D . Comparison of these data with those obtained from Hall effect measurements indicate that the latter overestimate the value of NA-N D by almost a factor of 2. The boron concentration has been determined in approximately the same surface layer as the capacitance measurements by detecting the cr-particles emitted during irradiation with 700 keV protons using the reaction 1lB (p, cr#Be*+ 2az. A quantitative correlation has been obtained between the boron and acceptor concentrations. 73 951

Spacers Alternatives for INTEGRATION OF (3D) STACKED SBT FeCAPs

“…Despite mechanical stability, 10 to 20 nm of Ir oxidation was observed at the SBT interface with SEM x-sections, Fig. The degradation of the SBT properties when Ir is used cannot be attributed to bismuth diffusion through the electrode, since this has been shown by Igarashi et al not to occur at 700 • C [13]. No oxidation was observed in the Ti(Al)N layer.…”

Chemical mechanical polishing of PZT thin films for FRAM applications

“…The sol-gel solution of Pb 1 solid-state lead acetate was initially dissolved in acetic acid and then mixed to obtain a Pb stock solution. Zirconium isopropoxide and titanium isopropoxide were dissolved in 2-methoxyethanol under a N 2 atmosphere.…”

“…Using the conventional SiO 2 films, the thickness of the films can be less than 0.5 nm but the dielectric constant also will be lower. Therefore, the utilization of high dielectric constant materials will become inevitable [1]. The perovskite ferroelectric materials of the PZT, SBT and BST series [2] will attract much attention for application to ULSI devices.…”

Spacers Alternatives for INTEGRATION OF (3D) STACKED SBT FeCAP s

“…4). The degradation of the SBT properties when Ir is used cannot be attributed to bismuth diffusion through the electrode, since this has been shown by Igarashi et al not to occur at 700 • C [13]. Ir oxidation could be avoided if oxygen partial pressures lower than 150 ppm are used during annealing [14].…”