Submicron-scale surface roughening induced by ion bombardment

Eklund, Elliott A.; Bruinsma, Robijn; Rudnick, Joseph; Williams, R. Stanley

doi:10.1103/physrevlett.67.1759

Cited by 265 publications

(117 citation statements)

References 11 publications

Supporting

Mentioning

108

Contrasting

Order By: Relevance

“…First, the roughness might simply arise from the shot-noiselike, infrequent sputtering of the sample surface by plasma ions. 29,30 Second, SiO x F y nanoparticles might form in the plasma and precipitate on the sample surface, yielding a random mask for the initial physical etching and, thus, a strongly increased surface roughness. 22 However, further experimental evidence is necessitated to resolve the issue of nanostructure initiation conclusively.…”

Section: A Structure Evolution During Etchingmentioning

confidence: 99%

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Steglich

Käsebier

Zilk

et al. 2014

Journal of Applied Physics

114

View full text Add to dashboard Cite

Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of SF6 and O2 at non-cryogenic temperatures. The structure evolution and the dependency of final structure geometry on the main processing parameters gas composition and working pressure are investigated and explained comprehensively. The optical properties of the produced Black Silicon structures, a distinct antireflection and light trapping effect, are resolved by optical spectroscopy and conclusively illustrated by optical simulations of accurate models of the real nanostructures. By that the structure sidewall roughness is found to be critical for an elevated reflectance of Black Silicon resulting from non-optimized etching processes. By analysis of a multitude of structures fabricated under different conditions, approximate limits for the range of feasible nanostructure geometries are derived. Finally, the technological applicability of Black Silicon fabrication by ICP-RIE is discussed

show abstract

Section: A Structure Evolution During Etchingmentioning

confidence: 99%

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Steglich

Käsebier

Zilk

et al. 2014

Journal of Applied Physics

114

View full text Add to dashboard Cite

show abstract

“…The generality of KPZ scaling would be a consequence of the phenomenon of universality observed for the scaling properties of rough surfaces. However, despite some attempts at measuring KPZ scaling in, e.g., IBS [7] or ECD [8], to date very few experiments have been reported which are unambiguously described by the KPZ equation [9 -11]. The identiÿcation of the physical mechanisms responsible for this paradoxical (termed "anomalous" in some early studies of kinetic roughening) non-KPZ scaling behavior has been complicated by two main reasons: on the one hand, while detailed derivations of the KPZ equation have actually been achieved, they apply to discrete or continuous theoretical models [12] which are indirectly related with experiments, or else the derivations themselves need resort to approximations which are not free from ambiguities.…”

Section: Introductionmentioning

confidence: 99%

Possible origin for the experimental scarcity of KPZ scaling in non-conserved surface growth

Cuerno

Castro

2002

Physica A: Statistical Mechanics and its Applications

View full text Add to dashboard Cite

The Kardar-Parisi-Zhang (KPZ) equation is generically expected to describe the scaling properties of rough surfaces growing in the absence of conservation laws. However, very few experimental realizations are known of this universality class. Here we focus on the role of instabilities, whether of di usional origin or other, as physical mechanisms hindering the observation of KPZ scaling. Examples are drawn from various growth processes, such as electrochemical deposition (ECD), chemical vapor deposition (CVD), and erosion by ion-beam sputtering. We moreover consider an interface equation which, starting from the corresponding constitutive equations, can be derived to describe growth by either ECD or CVD depending on the interpretation of the quantities appearing. This approach makes contact with phenomenological parameters, and suggests that a more generic description of non-conserved growth may be provided by the KuramotoSivashinsky equation and generalizations thereof. In this case, the experimental scarcity of KPZ scaling would be due to exceedingly long transients determined by the instabilities that occur.

show abstract

“…While successful in predicting the ripple wavelength and orientation [9], the linear theory fails to explain a number of experimental features, such as the saturation of the ripple amplitude [10][11][12], or the appearance of kinetic roughening [14,15]. To address these questions it has been proposed [16] that these shortcomings can be cured by the inclusion of nonlinear terms and noise, derived from the Sigmund's theory of sputtering.…”

mentioning

confidence: 99%

Quantum dot and hole formation in sputter erosion

Kahng

Jeong

Barabási

2001

Applied Physics Letters

133

113

View full text Add to dashboard Cite

Recently it was experimentally demonstrated that sputtering under normal incidence leads to the formation of spatially ordered uniform nanoscale islands or holes. Here we show that these nanostructures have inherently nonlinear origin, first appearing when the nonlinear terms start to dominate the surface dynamics. Depending on the sign of the nonlinear terms, determined by the shape of the collision cascade, the surface can develop regular islands or holes with identical dynamical features, and while the size of these nanostructures is independent of flux and temperature, it can be modified by tuning the ion energy.PACS numbers:68.55. -a,68.65.+g,05.45.-a The fabrication and physical properties of quantum dots (QDs) are topics of high current interest due to their applications in optical devices and as potential construction blocks of novel computer architectures [1]. However, despite the high interest in the subject, the methods available for the fabrication of such dots are rather limited. Lithographic techniques, while undergoing rapid improvements in resolution [2], still cannot produce small and dense enough dots necessary for device applications. While much research has focused on self-assembled QD formation [3], that generates dots through the unique combination of strain and growth kinetics, these techniques offered relatively uniform islands only for a few material combinations and still have to find their way into devices. Consequently, there is continued high demand for alternative methods that would allow low cost and efficient mass fabrication of QDs. In the light of these technological driving forces, the recent demonstration that sputter erosion can lead to uniform nanoscale islands, that exhibit quantum confinement, will undoubtly capture the interest of the scientific community [4]. Ion beam sputtering has long been a leading candidate for surface patterning. While ripple formation on sputter eroded surfaces has been observed already in the 70s [5], in the last decade much work has been devoted to understand both the experimental and theoretical aspects of this fascinating self-organized phenomena. However, most experiments have focused on off-normal incidence, that, by breaking the symmetry along the surface, leads to anisotropic structures, such as ripples. While theoretically it was expected that under normal incidence the ripples should be replaced by some periodic cellular structures, such surface features have not been observed experimentally. Recently, two groups have obtained simultaneous advances in this direction. Facsko et al., investigating low-energy normal incident Ar + sputtering of GaSb (100) surfaces [4], observed that as erosion proceeds, nanoscale islands appear on the surface, that are remarkably well ordered, and have a uniform size distribution. On the other hand, recent experiments of Ar + sputtering of Cu(110), and Ne + sputtering of Ag (001) under normal incidence lead to relatively uniform depressions or holes [6]. These experiments, while represent significant tech...

show abstract

Submicron-scale surface roughening induced by ion bombardment

Cited by 265 publications

References 11 publications

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Possible origin for the experimental scarcity of KPZ scaling in non-conserved surface growth

Quantum dot and hole formation in sputter erosion

Contact Info

Product

Resources

About