Submicron-size patterning on the sapphire substrate prepared by nanosphere lithography and nanoimprint lithography techniques

Chang, Cheng-Chi; Shiao, Ming‐Hua; Chiang, Donyau; Yang, Chin-Tien; Huang, Mu‐Hsuan; Hsueh, Wen–Jeng

doi:10.1007/s12540-013-4031-5

Cited by 4 publications

(5 citation statements)

References 17 publications

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“…However, the plasma atmosphere containing the strongly reactive chlorine ions is necessary to etch the sapphire efficiently due to the superior mechanical hardness and excellent chemical stability of sapphire 10,15 organic photoresist is recommended as mask for PSS in the traditional photo lithography 1 . The resulting patterned feature size is within 2 to 5 μm because of the optical resolution limitation applied in the photo lithography.…”

Section: Introductionmentioning

confidence: 99%

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Chang¹,

Tseng²,

Lee³

et al. 2014

SPIE Proceedings

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Dual photoresist complimentary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the sub-micro pit patterns on a sapphire surface. The oxide photoresist is patterned by the direct laser writing and the developed mark size decreases to a smaller value than the laser spot size due to the thermal lithography. The small developed pit diameter is one of the advantages using oxide photoresist. The oxide photoresist possesses strong etching resistance against the oxygen plasma but shows no resistance against the chlorine plasma. The chlorine plasma is a necessary component to etch the sapphire during the ion-coupled-plasma reactive-ion-etching process because of sapphire's mechanical hardness and chemical stability. However, the characteristics of organic resist SU8 are opposite to that of oxide photoresist and possess moderate resistance against chlorine plasma but show no resistance to oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported here. The dependence of the laser power on the developed mark sizes and morphologies is illustrated by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated. Images of patterned pits on the large commercial sapphire substrates are also shown.

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Section: Introductionmentioning

confidence: 99%

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Chang¹,

Tseng²,

Lee³

et al. 2014

SPIE Proceedings

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“…These methods include traditional lift-off photolithography, 1 epitaxially lateral overgrowth method with a metal mask, 2-4 selective wet chemical etching, [5][6][7] e-beam lithography with organic photoresist, 8 nanosphere lithography, 9,10 and imprint lithography. Surface patterning on the sapphire surface is needed to further increase the light extraction efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…10,15 Thus, an organic photoresist is recommended as a mask for PSS in traditional photolithography. However, the plasma atmosphere containing the strongly reactive chlorine ions is an absolute necessity to etch the sapphire efficiently due to its superior mechanical hardness and excellent chemical stability.…”

Section: Introductionmentioning

confidence: 99%

Dual-photoresist complementary lithography technique for the formation of submicron patterns on sapphire substrates

Chang

Tseng

Lee

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Dual-photoresist complementary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the submicron pit array patterns on a sapphire surface. The oxide photoresist is patterned by direct laser writing, and the developed pit size decreases to a smaller value than the laser spot size due to the thermal lithography. The oxide photoresist possesses strong etching resistance against oxygen plasma but shows no resistance against chlorine plasma. During the ion-coupled-plasma reactive-ion-etching process, chlorine plasma is a necessary component to etch the sapphire. Moreover, the characteristics of organic resist are opposite those of oxide photoresist and possess moderate resistance against chlorine plasma but no resistance against oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported in this study. The dependence of laser power on the developed mark sizes and morphologies is examined by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated, and the thermal lithography concept is introduced to explain the effect of power on the developed oxide mark width. Images of patterned pit array on a commercial 4-inch-diameter sapphire substrate are also shown. Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/15/2015 Terms of Use: http://spiedl.org/terms

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“…A mask is necessary to define the desired patterns before etching by ICP-RIE. The following methods for producing the patterned mask on the sapphires before etching have been proposed: 1) traditional organic photoresist lithography etching [1]; 2) selective wet etching process [2,3]; 3) E-beam lithography [4]; 4) nanosphere lithography [5,6]; and 5) nanoimprint lithography [7,8]. The proposed technologies have advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

“…Although this method is efficient and cost effective, it is environmentally unfriendly and potentially health threatening for operators. The electron beam lithography [4], nanosphere lithography [5,6] and nanoimprint methods all have the capability to produce a submiron scale pattern mask on sapphire substrate. A special organic photoresist composition and vacuum operating environment are necessary for electron beam lithography.…”

Section: Introductionmentioning

confidence: 99%

Submicron Patterns on Sapphire Substrate Produced by Dual Layer Photoresist Complimentary Lithography

Chang

Shiao

Chiang

et al. 2013

AMM

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In this study, the combined technologies of dual-layer photoresist complimentary lithography (DPCL), inductively coupled plasma-reactive ion etching (ICP-RIE) and laser direct-write lithography (LDL) are applied to produce the submicron patterns on sapphire substrates. The inorganic photoresist has almost no resistance for chlorine containing plasma and aqueous acid etching solution. However, the organic photoresist has high resistance for chlorine containing plasma and aqueous acid etching solution. Moreover, the inorganic photoresist is less etched by oxygen plasma etching process. The organic and inorganic photoresists deposit sequentially into a composite photoresist on a substrate. The DPCL takes advantages of the complementary chemical properties of organic and inorganic photoresists. We fabricated two structures with platform and non-platform structure. The non-platform structure featured structural openings, the top and bottom diameters and the depth are approximately 780 nm, 500 nm and 233 nm, respectively. The platform structure featured structural openings, the top and bottom diameters and the depth are approximately 487 nm, 288 nm and 203 nm, respectively. The precision submicron or nanoscale patterns of large etched area and patterns with high aspect ratio can be quickly produced by this technique. This technology features a low cost but high yield production technology. It has the potential applications in fabrication of micro-/nanostructures and devices for the optoelectronic industry, semiconductor industry and energy industry.

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Submicron-size patterning on the sapphire substrate prepared by nanosphere lithography and nanoimprint lithography techniques

Cited by 4 publications

References 17 publications

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Dual-photoresist complementary lithography technique for the formation of submicron patterns on sapphire substrates

Submicron Patterns on Sapphire Substrate Produced by Dual Layer Photoresist Complimentary Lithography

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