2002
DOI: 10.1063/1.1448176
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Submicron YBa2Cu3Ox ramp Josephson junctions

Abstract: Submicron YBa2Cu3Ox/PrBa2Cu2.6Ga0.4Ox/YBa2Cu3Ox ramp-type Josephson junctions were fabricated and tested. The submicron bridges in the top electrode were patterned by e-beam lithography and Ar ion milling through an amorphous carbon (a-C) mask. Junctions with width ranging from 0.2 to 8 μm and oriented along different crystal directions of YBa2Cu3Ox have been produced. Current–voltage characteristics show a behavior consistent with the resistively shunted junction model with small excess current. Junction crit… Show more

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Cited by 13 publications
(9 citation statements)
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“…The conventional way to fabricate deep submicron biepitaxial Josephson junctions is to use electron beam lithography in combination with a hard mask and ion beam milling. This procedure, with amorphous carbon as hard mask, is well established and has been proven to work well for the realization of various kinds of submicron HTS Josephson junctions, for example ramp type, 17 bicrystal, 18 and biepitaxial. 19 In this work, we have fabricatated deep submicron Josephson junctions by the biepitaxial technique.…”
Section: A Conventional Nanostructuringmentioning
confidence: 99%
“…The conventional way to fabricate deep submicron biepitaxial Josephson junctions is to use electron beam lithography in combination with a hard mask and ion beam milling. This procedure, with amorphous carbon as hard mask, is well established and has been proven to work well for the realization of various kinds of submicron HTS Josephson junctions, for example ramp type, 17 bicrystal, 18 and biepitaxial. 19 In this work, we have fabricatated deep submicron Josephson junctions by the biepitaxial technique.…”
Section: A Conventional Nanostructuringmentioning
confidence: 99%
“…The submicron bridges were defined using again electron beam lithography based on a multilayer carbon/PMMA ͑polymethyl methacrylate͒ mask. 11,14,16,17 After exposing and developing the PMMA, the pattern was transferred first to an evaporated chromium film using lift off, then to the carbon layer using reactive ion etching. The patterned carbon layer will then act as a mask for the shaping of the YBCO film by Ar ion beam etching.…”
Section: Methodsmentioning
confidence: 99%
“…[16][17][18][19] Rather, the behavior of some grain boundary junctions. [16][17][18][19][20] seems to be consistent with the phenomenological theory of Sigrist and Rice. 21 This certainly requires a rational explanation.…”
Section: Introductionmentioning
confidence: 99%