Submillimeter EPR evidence for the As antisite defect in GaAs

Wagner, R. J.; Krebs, J. J.; Stauss, G. H.; White, A. M.

doi:10.1016/0038-1098(80)90182-9

Cited by 207 publications

(38 citation statements)

References 9 publications

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“…In fact, we underline that only a small fraction of the EL2 related DLTS peak amplitude shows the photoquenching behaviour as we have found for GaAs [35]. [36]. Then, it was shown that the same EPR signal can be enhanced by electron irradiation [37], by neutron irradiation [30,38] or by plastic deformation [39].…”

supporting

confidence: 59%

EL2-related studies in irradiated and implanted GaAs

Guillot

1988

Rev. Phys. Appl. (Paris)

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Résumé. 2014 Le donneur profond EL2 est un défaut très important par le rôle qu'il joue dans la compensation du matériau GaAs semi-isolant non dopé. La Abstract. 2014 The midgap donor level EL2 is a very important defect because of the role it plays in the compensation of undoped semi-insulating GaAs. The knowledge of the exact EL2 structure becomes of even greater prime importance. We present here a review of the experimental results concerning artificial EL2 creation by electron and neutron irradiation and also ion implantation followed or not by annealing. These studies have greatly contributed in specifying the nature of EL2 namely a complex intrinsic defect with an arsenic antisite as a core (AsGa + X). We point out some new concepts such as hopping transitions due to interdefect electron tunnelling which have been tentatively proposed to account for observations in implanted and neutron irradiated samples. We also discuss the main results of these artificial creation experiments as a function of the recent models proposed for EL2 up to the present day.

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supporting

confidence: 59%

EL2-related studies in irradiated and implanted GaAs

Guillot

1988

Rev. Phys. Appl. (Paris)

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“…According to the present state of knowledge, such identification is by no means a unique one. Midgap levels other than EL2 (e.g., the oxygen-related ELO level) have been observed in GaAs with energies and optical quenching characteristics very similar to those of EL2 (22)(23)(24).…”

Section: Sammentioning

confidence: 93%

“…GaAs (22)(23)(24)38). Other midgap levels are often present In LEC and in HBGaAs at concentrations which depend on the exact growth condition.…”

mentioning

confidence: 99%

Investigation of Device and Electronic Interactions Associated with GaAs Device Processing.

Gatos¹,

Łagowski²

1985

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“…18 Following growth, the chamber was cooled, and the GaAs sample was removed from the chamber and transferred to our metals deposition facility to create Schottky diodes.…”

Section: Methodsmentioning

confidence: 99%

Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs

Sitnitsky

Garramone

Abel

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ballistic electron emission microscopy (BEEM) was performed to obtain nanoscale current versus bias characteristics of non-epitaxial Au on p-type GaAs in order to accurately measure the local Schottky barrier height. Hole injection BEEM data was averaged from thousands of spectra for various metal film thicknesses and then used to determine the attenuation length of the energetic charge carriers as a function of tip bias. We report the marked increase in attenuation length at biases near the Schottky barrier, providing evidence for the existence of coherent BEEM currents in Schottky diodes. These results provide additional evidence against the randomization of a charge carrier's momentum at the metal-semiconductor interface. thibado@uark.edu -2-

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Submillimeter EPR evidence for the As antisite defect in GaAs

Cited by 207 publications

References 9 publications

EL2-related studies in irradiated and implanted GaAs

EL2-related studies in irradiated and implanted GaAs

Investigation of Device and Electronic Interactions Associated with GaAs Device Processing.

Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs

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