SubMM-wave multipliers by film-diode technology

Cojocari, Oleg; Oprea, Ion; Gibson, Hugh; Walber, Achim

doi:10.1109/eumc.2016.7824347

Cited by 14 publications

(11 citation statements)

References 5 publications

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“…In 2010, M. Henry et al from RAL laboratory in the United Kingdom designed a frequency doubler with an output frequency of 160 GHz using a selfdeveloped varactor diode on an AlN substrate using the "substrate graft technique." [113] With AlN as the substrate, the efficiency of the doubler was twice as high as with gallium arsenide as the substrate, demonstrating the improvement of the "substrate graft" technology for doubler performance. In 2016, ACST of German reported that the maximum efficiency of the 332 GHz doubler based on the substrate transfer technology reached 30%, the maximum efficiency of the 440 GHz doubler reached 28%, and 660 GHz tripler reached 6%.…”

Section: Substrate Transfer or Film-diode Technologymentioning

confidence: 93%

“…Substrate transfer or thin film diode technology. (a) A 400 GHz balanced frequency doubler circuit structure with “no substrate,” leaving only the frame of the front metal wires to support the entire circuit [ 83 ] ; (b) Photographic diagram of the assembly circuit of a 440 GHz doubler fabricated by the thin film process [ 114,115 ] …”

Section: Schottky Diodes Based Monolithic Integrated Multipliersmentioning

confidence: 99%

“…The development direction of diodes mainly includes: 1) Establish more accurate diode model, accurately describe the parasitic capacitance, inductance and resistance, etc., and explore a new parasitic diode structure; 2) Explore the diode process of new materials. The typical GaN Schottky diode has been successfully applied in the frequency multiplier [70] . Theoretically, GaN Schottky diode has higher voltage and power capacity.…”

Section: Analysis Of Future Trendsmentioning

confidence: 99%

“…Fig. 9(b) was a 440 GHz doubler manufactured by using the thin film process [ 114,115 ] . The structure had low substrate loss and high mechanical strength, which improved the alignment accuracy and reduced the difficulty of assembly.…”

Section: Schottky Diodes Based Monolithic Integrated Multipliersmentioning

confidence: 99%

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A Review of Terahertz Sources Based on Planar Schottky Diodes

Kou

Liang

Zhou

et al. 2022

Chinese J of Electronics

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The special position of terahertz wave in the electromagnetic spectrum makes it possess the characteristics of orientation, broadband, penetration and low energy, which promotes the extensive research of terahertz wave in the fields of communication, radar, imaging, sensing, security inspection and so on. The solid-state terahertz sources based on semiconductor devices have attracted extensive attention in the field of terahertz information technology due to their characteristics such as being able to work at room temperature, being small in size, being easy to integrate and having good frequency stability. Terahertz planar Schottky diode is a kind of low parasitic semiconductor device. Its high cutoff frequency makes it work well in the terahertz range. The frequency multiplier based on planar Schottky diode is an important part of terahertz solid state source. In this review, the development of Schottky diodes technology in recent years have been introduced, including the structures and preparation of Schottky diodes. In addition, the current situation and performance of different types of terahertz sources based on Schottky diodes are further introduced, and the future development trend is discussed.

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Section: Substrate Transfer or Film-diode Technologymentioning

confidence: 93%

Section: Schottky Diodes Based Monolithic Integrated Multipliersmentioning

confidence: 99%

Section: Analysis Of Future Trendsmentioning

confidence: 99%

Section: Schottky Diodes Based Monolithic Integrated Multipliersmentioning

confidence: 99%

See 2 more Smart Citations

A Review of Terahertz Sources Based on Planar Schottky Diodes

Kou

Liang

Zhou

et al. 2022

Chinese J of Electronics

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“…However, it is still a challenge for the GaAs-based frequency multipliers to meet requirements for high-power applications owing to the shortages of low breakdown voltage and heat dissipation. The following techniques have been adopted for the higher output power of the frequency multiplier, such as reducing heat dissipation by cooling [ 15 ], diamond substrate [ 16 , 17 ], film-diode technology [ 18 , 19 ], power-combining technology [ 20 , 21 , 22 , 23 ], and so on. However, these techniques result in complex THz sources architecture and higher costs.…”

Section: Introductionmentioning

confidence: 99%

120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode

et al. 2022

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Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown voltage and heat dissipation of the Schottky barrier diode (SBD). In this study, a GaN SBD chain was fabricated with n−/n+-GaN structure. As a consequence, the breakdown voltage of 54.9 V at 1 μA and cut-off frequency of 587.5 GHz at zero bias were obtained. A 120 GHz frequency-doubler module based on the GaN SBD chain was designed and fabricated. When driven with 500 mW input power in a continuous wave, the output power of the frequency-doubler module was 15.1 mW at 120 GHz. Moreover, the experiments show that the frequency-doubler module can endure an input power of 2 W. In addition, it is worth noting that the SBD chain works well at an anode temperature of 337.2 °C.

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