2006
DOI: 10.1063/1.2188593
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Subnanometer-resolved measurement of the tunneling effective mass using bulk plasmons

Abstract: Superlattices are periodic structures where the constituents alternate between low-and high-bandgap materials; the resulting quantum confinement tailors the resulting device properties and increases their operating speed. Amorphous carbon is an excellent candidate for both the well and barrier layers of the superlattices, leading to a fast and reliable device manufacturing process. We show theoretically and experimentally that, using low energy-loss spatially resolved spectroscopy, we can characterize the comp… Show more

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Cited by 3 publications
(4 citation statements)
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“…The E 2 − E 1 is calculated to be 0.45 eV ͑E 1 = 0.2 eV and E 2 = 0.65 eV͒ for the effective mass m * ϳ 0.06, r ϳ 4, and w = 3 nm which is further confirmed by modeling. 8,15 Hence, the average value of the band bending in the sp 2 layer attributed to the space potential is ϳ0.2 eV and is comparable to E 1 . When E c of the Si substrate is aligned with the first confined energy E 1 by this band bending, resonant tunneling can occur and hence the emission current will increase.…”
mentioning
confidence: 74%
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“…The E 2 − E 1 is calculated to be 0.45 eV ͑E 1 = 0.2 eV and E 2 = 0.65 eV͒ for the effective mass m * ϳ 0.06, r ϳ 4, and w = 3 nm which is further confirmed by modeling. 8,15 Hence, the average value of the band bending in the sp 2 layer attributed to the space potential is ϳ0.2 eV and is comparable to E 1 . When E c of the Si substrate is aligned with the first confined energy E 1 by this band bending, resonant tunneling can occur and hence the emission current will increase.…”
mentioning
confidence: 74%
“…The fully depleted sp 2 a-C layer could create electric fields much greater than the macroscopic field external to it. [12][13][14] Similar to the space charge induced band bending model for amorphous materials in which the Si substrate acts as the electron source, [12][13][14][15] Semet et al 5 and Wang et al 7 proposed an identical hypothesis for GaN based double layered structures. We postulate electron injection from Si into the sp 2 "well layer" through the 3 nm thick sp 3 layer by field penetration.…”
mentioning
confidence: 99%
“…8(a) as a solid curve. Spatially-resolved bulk-plasmon spectroscopy has been used to identify the presence of metals in a specimen [e.g., Na in either Na 2 O or silicate glasses (Jiang et al, 2008)] and to demonstrate the effect of quantum confinement in carbon nanostructures by tracing local variations in the plasmon energy (Stolojan et al, 2006), which are related to changes in the conduction-electron density through Eq. (A2).…”
Section: B Bulk Losses and Determination Of Bulk Dielectric Functionsmentioning
confidence: 99%
“…DLC superlattice devices would facilitate a new class of devices with robust operating conditions. Quantum confinement has been firmly established in these disordered superlattice structures 13 which showed evidence of negative differential resistance (NDR) 14 15 16 . DLC double barrier structures showed a greater peak to valley ratio as well as demonstrating high frequency performance capabilities up to 110 GHz and bias-related hysteresis in the current-voltage characteristics 12 .…”
mentioning
confidence: 99%