Amorphous-carbon ͑a-C͒-based quantum confined structures were synthesized by pulsed laser deposition. In these structures, electrons are confined in a few nanometer thick sp 2 rich a-C layer, which is bound by the vacuum barrier and a 3 nm thick sp 3 rich a-C base layer. In these structures anomalous field emission properties, including negative differential conductance and repeatable switching effects, are observed when compared to control samples. These properties will be discussed in terms of resonant tunneling and are of great interest in the generation and amplification of high-frequency signals for vacuum microelectronics and fast switching devices. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2378492͔The operational speed of solid-state electronic devices is limited by the saturation velocity of electrons ͑ϳ10 5 ms −1 ͒ due to the lattice scattering, while the electron velocity in vacuum can approach the speed of light, 3 ϫ 10 8 ms −1 . Hence, vacuum microelectronic devices are attractive for high-speed and high-frequency applications.1 Electron field emission ͑FE͒ materials can be used to fabricate these devices.2 The amplifier and oscillator are two key components for high-speed electronics, both of which require an element, such as a resonant tunnel diode ͑RTD͒, to provide negative differential conductance ͑NDC͒ for operation. Hence, quantum-well ͑QW͒ structures showing NDC in their FE process are extremely promising and have attracted a lot of research interest.3-7 Most of these studies were focused on the GaN or Si-based quantum well systems, perhaps because of the early success of applying these materials in RTDs. However, the fabrication processes of these materials ͑e.g., low-pressure metal organic chemical vapor deposition for GaN͒ are expensive and require a high process temperature. In this work, the FE properties of an amorphous carbon ͑a-C͒-based QW structure using pulsed laser ablation of a graphite target at room temperature are studied. We show the NDC and the switching effects in the FE measurements. This work is inspired by our recent success in implementing a RTD using the a-C system for high-speed switching devices 8 and by the outstanding physical properties of carbon related materials, such as high electron mobility, high breakdown field, high thermal conductivity, and low threshold fields for electron emission. 9,10 Figure 1 shows the energy band structure of the a-C nanolayers. The layers were prepared by the ablation of a graphite target ͑99.999% purity͒ using 248 nm pulsed UV excimer laser ͑Lambda Physik LPX 210i͒ at a chamber pressure of ϳ10 −7 mbar. The substrates used were n-type ͑100͒ Si wafers ͑resistivity ഛ0.05 ⍀ cm͒, with samples growth without any substrate heating. The band gap ͑E g ͒ of the a-C layers was modulated by the laser fluence. First, a 3 nm thick sp 3 rich ͑85% sp 3 and E g = 2.8 eV͒ a-C layer was deposited on the Si with the laser fluence of 20 J / cm 2 , which served as the bottom potential barrier for the structure. This was followed by another sp ...