Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

Krotkus, A.; Viselga, R.; Bertulis, K.; Jasutis, V.; Marcinkevičius, Saulius; Olin, U.

doi:10.1063/1.113283

Cited by 36 publications

(22 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ti:sapphire laser pulses were used both for sample excitation and sum-frequency generation. Temporal resolution of this measurement, as it was demonstrated previously [6], was about 100 fs. Average excitation intensities ranging from 10 to 100 mW were used, which corresponded to the excited carrier densities of the order of 2 x 10 17-2 x 10 1 8/cm3 .…”

supporting

confidence: 54%

Transient Photoconductivity and Photoluminescence in InP:Cu

et al. 1996

Self Cite

View full text Add to dashboard Cite

Nonequilibrium photoexcited carrier dynamics in InP:Cu was investigated by two experimental techniques: the time-resolved photoluminescence up-conversion and the transient photoconductivity measurement. Both measurements show that dopmg with copper significantly modifies the photoexcited carrier relaxation in indium phosphide. There are several strong indications that this effect originates from the carrier trapping at metallic precipitates.PACS numbers: 72.40.+w, 78.47.+p, 78.55.-m Semi-insulating Α3B5 semiconduction have numerous important applications as substrates for integrated circuits, microwave and optoelectronic devices. Usually, such materials are obtained by utilizing deep, near-midgap levels compensating shallow impurities. It has been proposed [1] that semi-insulating Α 3 B 5 materials can be created also by introduction of metallic precipitates into the semiconductor, at sufficiently large densities. Originally proposed for explaining unique properties of well-known GaAs 1ayers grown by a low-temperature molecular-beam epitaxy (LT GaAs) the precipitate model is still far from being commonly accepted for that material. In contrary, the latest investigations indicate that the high resistivity and ultrashort carrier lifetimes in LT GaAs can be better explained by the presence of deep, excess-arsenic-related defects [2], a model alternative to the precipitate model. However, it has been observed recently [3][4][5] that metallic inclusions are responsible for semi-insulating behavior in another Α3B5 materialCu-diffused InP.The samples studied were prepared using as-grown nominally undoped, n-type (5 x 10 15 /cm3) InP wafers. Cu was evaporated on both sides of the samples, diffused in clean quartz ampoules and sealed. After diffusion, the samples were rapidly quenched by dropping the ampoules into liquid nitrogen. Any residual Cu was removed from the samples surfaces by a mechanical polishing followed by an etching (931)

show abstract

supporting

confidence: 54%

Transient Photoconductivity and Photoluminescence in InP:Cu

et al. 1996

Self Cite

View full text Add to dashboard Cite

show abstract

“…A part of a pulsed laser beam induces the change in a certain physical characteristic of the sample, and this change is monitored with a second part of the same beam that arrives at the sample at different time delays. Carrier dynamics was documented by pump-probe measurements of several different physical characteristics of LTG GaAs: photocurrent transients [59], dynamic reflectance [60], dynamic transmittance [61], time-resolved photoluminescence [62], and THz conductivity [63]. All these physical characteristics are mainly sensitive to the presence of the non-equilibrium electrons in the sample; therefore, the electron dynamics in LTG GaAs is fairly well understood.…”

Section: Electron Trapping Timesmentioning

confidence: 99%

Semiconductors for terahertz photonics applications

Krotkus¹

2010

J. Phys. D: Appl. Phys.

112

View full text Add to dashboard Cite

Abstract:Generation and measurement of ultrashort, sub-picosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of the far-infrared spectroscopy and imaging. This technique -THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility, and large dark resistivity. Here we will review most important developments in the field of investigation of such materials. Main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. Main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

show abstract

“…These materials were a subject of our common studies with prof. Arūnas Krotkus from the Semiconductor Physics Institute in Vilnius, Lithuania, who in the last twenty years has performed the prominent research of a broad spectrum of semiconductor materials with a short excess carrier lifetime and showed their high usefulness in ultrafast optoelectronic devices, like THz emitters or THz detectors (see [19][20][21][22][23][24][25][26][27][28][29] for some of the most prominent results of A. Krotkus).…”

Section: Semiconductors With High Concentration Of Deep Impurities Ormentioning

confidence: 99%

Radiative recombination and other processes related to excess charge carriers, decisive for efficient performance of electronic devices

Wincukiewicz¹,

Mech²,

Grankowska³

et al. 2018

physics

View full text Add to dashboard Cite

We present selected semiconductor (inorganic and organic) structures for which non-radiative recombination of excess charge carriers is very high, luminescence suppressed and its lifetime substantially shortened. Processes competitive with radiative energy emission are discussed. The importance of Shockley-Read-Hall recombination in materials with high impurity or defect concentration, applied in ultrafast devices, is shown. Also, charge transfer process in solar cells is discussed in the context of luminescence quenching of individual components of an active layer.A part of the shown research was a subject of our common work with Prof. Arūnas Krotkus during the period from 1994 till 2006.

show abstract

Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

Cited by 36 publications

References 5 publications

Transient Photoconductivity and Photoluminescence in InP:Cu

Transient Photoconductivity and Photoluminescence in InP:Cu

Semiconductors for terahertz photonics applications

Radiative recombination and other processes related to excess charge carriers, decisive for efficient performance of electronic devices

Contact Info

Product

Resources

About