Psychiatry 2012
DOI: 10.5005/jp/books/11679_8
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“…The second mechanism producing NDPC is the decrease of the majority carrier concentration due to recombination of minority carriers supported by a recombination-type crystallographic defect. This model was first proposed by Stockman et al [26] and implemented for diamond photodetectors [20], thin films [27], MoS 2 monolayers [28], p-type PbEuTe and other materials. A similar mechanism of enhanced radioactive capture of hot electrons was proposed by Ridley et al [29] for III-V and II-VI semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…The second mechanism producing NDPC is the decrease of the majority carrier concentration due to recombination of minority carriers supported by a recombination-type crystallographic defect. This model was first proposed by Stockman et al [26] and implemented for diamond photodetectors [20], thin films [27], MoS 2 monolayers [28], p-type PbEuTe and other materials. A similar mechanism of enhanced radioactive capture of hot electrons was proposed by Ridley et al [29] for III-V and II-VI semiconductors.…”
Section: Introductionmentioning
confidence: 99%