We studied deep levels (DLs) in p-type Cd 1-x Mn x Te by photo-Hall effect spectroscopy with enhanced illumination. We showed that the mobility of minority (925±11 cm 2 s -1 V -1 ) and majority (59.6±0.4 cm 2 s -1 V -1 ) carriers can be deduced directly from the spectra by using proper wavelength and excitation intensity. Four deep levels with ionization energies E t1 = E V + 0.63 eV, eV, E t2 = E V + 0.9 eV, E t3 = Ec -1.0 eV and E t4 = Ec -1.3 eV were detected and their positions in the bandgap were verified by comparison of photogenerated electron and hole concentrations. Deduced DL model was analyzed by numerical simulations with Shockley-Reed-Hall charge generation-recombination theory and compared with alternative DL models differing in the position of selected DLs relative to E c and E v . We showed that the consistent explanation of collected experimental data principally limits the applicability of alternative DLs models. We also demonstrated the importance of the extended operation photon fluxes (I > 4×10 14 cm -2 s -1 ) used in the spectra acquisition for correct determination of DLs character. Negative differential photoconductivity was observed and studied by charge dynamic theoretical simulations. a