2002
DOI: 10.1103/physrevb.65.172501
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Substitution for Cu in the electron-doped infinite-layer superconductorSr0.9La0.1CuO

Abstract: We report the effect of substitution for Cu on the Tc of the electron-doped infinite-layer superconductors Sr0.9La0.1Cu1−xRxO2 for R = Zn and Ni. We found that Tc was nearly constant until x ∼ 0.03 for R = Zn while the superconductivity was nearly suppressed for x ∼ 0.02 with dTc/dx ≥ 20 K/% for R = Ni. This behavior is very similar to that of conventional superconductors. These findings are discussed in terms of the superconducting gap symmetry in the cuprate superconductors, including another electron-doped … Show more

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Cited by 33 publications
(5 citation statements)
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“…Our deduction of s-wave behaviour is consistent with previously observed behaviour upon doping SLCO with impurities [3,30]. It is a well-known result that doping exclusively d-wave superconductors with a small concentration of nonmagnetic impurities results in a strong suppression of T c .…”
Section: Resultssupporting
confidence: 92%
“…Our deduction of s-wave behaviour is consistent with previously observed behaviour upon doping SLCO with impurities [3,30]. It is a well-known result that doping exclusively d-wave superconductors with a small concentration of nonmagnetic impurities results in a strong suppression of T c .…”
Section: Resultssupporting
confidence: 92%
“…The effects of magnetic and non-magnetic impurities on the normal-state and superconducting-state properties are also significantly different in the electron-doped HTSCs when compared with the hole-doped HTSCs. For example, Zn initially reduces the superconducting transition temperature, T c , by ∼10 K/% (Zn in the CuO 2 plane) for hole-doped HTSCs near optimal doping [30][31][32][33], while the initial suppression rate is much smaller in the electron-doped HTSCs where it is ∼1 K/% (Zn in the CuO 2 plane) [34]. Ni has the opposite effect on T c , where T c is initially reduced by ∼20 K/% (Ni in the CuO 2 plane) in the electron-doped HTSCs [34][35][36][37] but it is only initially reduced by up to 4 K/% (Ni in the CuO 2 plane) in the hole-doped HTSC, YBa 2 Cu 3 O 7−d [38] and 12 K/% (Ni in the CuO 2 plane) in the hole-doped HTSC, YBa 2 Cu 4 O 8 [30,[39][40][41][42].…”
Section: Introductionmentioning
confidence: 99%
“…Also the high vapor pressure of As can cause the loss of the element during the growth and raises safety concerns. Thus, we adopted a high pressure synthesis technique that has been routinely used by us for the crystal growth of MgB 2 , Sr 1−x La x CuO 2 , and MgCNi 3 [26][27][28]. And, we targeted the compound of fluorine-free REFeAsO 1−x F x for the following reasons.…”
Section: Introductionmentioning
confidence: 99%