In this work we investigated the use of analytical techniques based on ion beams in the quantification of Boron in many kinds of samples. Specifically, we applied techniques such Nuclear Reaction Analysis (NRA), Elastic Recoil Detection Analysis (ERDA) and Secondary Ion Mass Spectrometry (SIMS) to 11 B/Ni and B/Si samples to measure the boron concentration. We also discuss and show what technique has a better detection limit and lower uncertainty. For the first time in the literature, we obtained the cross section for the 11 B(p, α 0) 8 Be nuclear reaction in the energy range from 1.6 up to 2.0 MeV in θ = 170 • scattering angle. The SIMS technique was applied to analise samples of metallurgical grade silicon (SiGM) from Metallurgy Group of Instituto de Pesquisas Tecnologicas (IPT) to check the Inductively Coupled Plasma (ICP) measurements carried out by the IPT. Moreover, it was possible to build a calibration curve between SIMS and ICP measurements, that can be used to help of Metallurgy Group with futures ICP's measurements.