We report core-level and valence-band ͑VB͒ photoemission data of C 60 molecules adsorbed at room temperature ͑RT͒ on Si͑111͒. The measurements have been carried out as a function of C 60 coverage ͓from 0.20 monolayer ͑ML͒ up to 2.2 ML͔ and annealing temperature ͑from RT up to 1300 K͒. From the VB spectra no increasing of the Fermi-level photoemission intensity has been observed for all the coverages investigated thereby indicating that no charge transfer occurs at the interface. Remarkable changes take place on the 1-ML spectrum as the annealing temperature is increased up to the disruption of the C 60 cages and the following formation of SiC. ͓S0163-1829͑99͒02623-5͔
INTRODUCTIONC 60 epitaxial growth on different metal and semiconductor substrates has attracted much interest in the last few years. Such systems can be used both as templates for the deposition of single-crystalline C 60 -thick films and to study the interaction between C 60 molecules and different elements.Solid C 60 is a molecular solid and molecules interact each other mainly through van der Waals forces. 1 The character of the bond between fullerene molecules and different substrates varies widely depending on many different factors. Strong charge transfer from metal atoms to the C 60 molecules has been observed in C 60 absorption on noble metals, Ni, etc., 2 while, for example, on Pt͑111͒ and Al͑110͒ the interaction has primarily covalent character with negligible charge transfer. 3,4 Recently, an intense experimental work has been done to study the interaction between C 60 and different Si surfaces. C 60 interaction with Si surfaces is strong: fullerene does not desorb from silicon surfaces even at 1300 K and fragment to form SiC film at temperatures above 1000 K. [5][6][7][8] One reason of this kind of research is to find the right way to use fullerenes as precursors to grow well-ordered SiC films for electronic devices with improved quality with respect to more standard methods. 9 The C 60 /Si͑111͒ system, though widely investigated is still not well understood and a series of controversies is open. The character of the bond has been found to depend on the C 60 coverage and on the annealing or growing temperature. 10,11 Scanning tunneling microscopy ͑STM͒ and Highresolution electron-energy-loss spectroscopy ͑HREELS͒ studies suggest that C 60 bond on Si(111)-(7ϫ7) surfaces is characterized by charge transfer from Si dangling bonds to C 60 when the molecules are adsorbed on the surface at RT and up to an annealing temperature of Ϸ870 K, while the bond is primarily covalent at higher annealing temperatures. 7,12-14 HREELS measurements, from the energy shift of the four dipole active modes T 1u and same H g modes, give an estimation of the charge transferred up to 4 Ϯ1 electrons/molecule. 6,13 However, these assignments have to be analyzed carefully. Actually, the energy shift of the vibrational modes depends not only on the charge state of the C 60 molecules, but also on different physical parameters, 15 such as, for example, on the structural ...