Substrate agnostic monolithic integration of the inline phase-change switch technology

El-Hinnawy, Nabil; Borodulin, Pavel; Ezis, A.; Furrow, Colin; Padilla, Carlos R.; King, Matthew R.; Jones, E. B. Gareth; Wagner, B.; Paramesh, Jeyanandh; Bain, James A.; Nichols, D.; Young, Robert M.

doi:10.1109/mwsym.2016.7540103

Cited by 28 publications

(13 citation statements)

References 19 publications

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“…The integration of PCM technologies into high frequencies (including millimeter-wave domain) functions is based on their capacity to change from a conductive state, ON (crystalline phase) to an insulating sate, OFF (amorphous phase). The material's properties are controlled using the application of a thermal, electrical or optical stimulus [12]- [15]. The key advantage of PCM-based devices technology is the bi-stability, i.e.…”

Section: Electrical Properties and Optical Control Of Pcmmentioning

confidence: 99%

Polarization Reconfiguration of a Millimeter-Waves Antenna using the Optical Control of Phase Change Materials

Leon-Valdes¹,

Huitema²,

Arnaud³

et al. 2020

2020 14th European Conference on Antennas and Propagation (EuCAP)

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We present the integration of Germanium Telluride (GeTe), a phase change material (PCM), within a conventional patch antenna operating in the millimeter wave domain (~ 30 GHz). The GeTe is integrated within the four corners of the metallic patch, which is excited by a microstrip line. The phase changes between the insulating (OFF) and metallic (ON) states of GeTe are controlled using shorts ultraviolet (UV) laser pulses. That allows the reconfiguration of the device between a linear polarization (LP), a left hand circular polarization (LHCP) and a right hand circular polarization (RHCP). Measured results of the fabricated antenna show total efficiencies up to 75 % for the circular polarization (CP) and a 3 dB bandwidth of axial ratio (AR) over 350 MHz around 29.5 GHz.

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Section: Electrical Properties and Optical Control Of Pcmmentioning

confidence: 99%

Polarization Reconfiguration of a Millimeter-Waves Antenna using the Optical Control of Phase Change Materials

Leon-Valdes¹,

Huitema²,

Arnaud³

et al. 2020

2020 14th European Conference on Antennas and Propagation (EuCAP)

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“…Thickness is defined by the technological stack and is of 300 nm here. [1] 10 5 Indirect GeSbTe [2] 9.3x10 3 Indirect GeSb [3] 1.4x10 3 Indirect…”

Section: B Electrical Characterizationmentioning

confidence: 99%

“…FoM -fs RON -Ω GeTethis work 9.18 1.7 GeSbTe [2] 38 10 GeSb [3] -49 GeTe [1] 15.5 1.1 GeTe [5] 15 2.4 SOI [6] 250 -IV. CONCLUSION A study of GeTe phase change material with direct heating used to realize RF switches was presented.…”

Section: Technologymentioning

confidence: 99%

“…Several publications already have showed that their electrical performance can overcome the current state-of-the-art of conventional devices. Several PCM as Germanium Telluride GeTe [1], Germanium Antimony Telluride GeSbTe [2], and Germanium Antimonide GeSb [3] have already been used. Electrical switching is ensured by a change in the structural phase of the material submitted to a temperature gradient.…”

Section: Introductionmentioning

confidence: 99%

“…Heating may also be indirect. In that case, electrical signal heats an intermediate highly resistive material that transfers its calorific energy to PCM via Joule effect [1]. Phase change induces an important resistive transition in the material.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

In-depth caracterisation of the structural phase change of Germanium Telluride for RF switches

Leon

Saint-Patrice

Castellani

et al. 2017

2017 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-A

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This paper presents the phase change characterization of Germanium Telluride GeTe used for RF switches when a direct heating is performed. The study describes the method to activate the transition between crystalline and amorphous states, allowing to reach a resistance ratio of 1.8.10 4 between both states. RF measurements were performed up to 40 GHz on fabricated switches, showing an ON-state resistance of 1.7 Ω. An OFF-state capacitance of 5.4 fF was extracted from simulation, resulting in an estimated cutoff frequency of 17 THz. The study also shows the importance of the GeTe thickness to optimize the performance of the device.

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Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Pazos,

Shen,

Zhang

et al. 2024

Nat Electron

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Substrate agnostic monolithic integration of the inline phase-change switch technology

Cited by 28 publications

References 19 publications

Polarization Reconfiguration of a Millimeter-Waves Antenna using the Optical Control of Phase Change Materials

Polarization Reconfiguration of a Millimeter-Waves Antenna using the Optical Control of Phase Change Materials

In-depth caracterisation of the structural phase change of Germanium Telluride for RF switches

Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

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