Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs

Sereni, Gabriele; Vandelli, Luca; Cavicchioli, Roberto; Larcher, Luca; Veksler, Dekel; Bersuker, G.

doi:10.1109/irps.2015.7112690

Cited by 2 publications

(3 citation statements)

References 14 publications

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“…The first step of the procedure consists in the simulation of the experimental IV characteristic: we purposely neglect the defect TAT contribution in the current calculation in order to estimate the minimum thickness of the native oxide, t Ga2O3 , which is believed to be made of a Ga 2 O 3 (20). Once t Ga2O3 has been determined (i.e., such that I SIM < I EXP ), the CV and GV based defect extraction procedure described also in (21)(22)(23) map N BT (E,z) responsible for the frequency dispersion of the CV and GV characteristics. This procedure, which relies on the simultaneous simulation of CV and GV curves measured at multiple frequencies, allows deriving additional physical parameters such as the channel doping, N DOP , and the equivalent oxide thickness, EOT, estimated consistently with N BT (E,z).…”

Section: Si-mosfet Hk Gate Stackmentioning

confidence: 99%

“…This procedure, which relies on the simultaneous simulation of CV and GV curves measured at multiple frequencies, allows deriving additional physical parameters such as the channel doping, N DOP , and the equivalent oxide thickness, EOT, estimated consistently with N BT (E,z). The frequency dispersion of the CV and GV characteristics is reproduced using an equivalent circuit model, (21)(22)(23). The oxide layer is discretized in order to consider the spatial and energy distribution of the defects along the stack.…”

Section: Si-mosfet Hk Gate Stackmentioning

confidence: 99%

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(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

Larcher

Sereni

Vandelli³

2016

ECS Trans.

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In this work we present a novel simulation-based methodology for the defect spectroscopy in dielectric materials. The cross-correlated simulation of electrical characteristics (IV, CV, GV, BTI, charge pumping and noise) is exploited to profile the properties and energy-space distribution of the defects within the oxide bandgap. This novel defect spectroscopy technique will be applied to three case studies, i.e. Si- MOSFET gate stack optimization with either Si and beyond Si channel (InGaAs), and STO MIM DRAM capacitor scaling. The integration of these methods into the process optimization will lead to a strong reduction of the time/cost required for the development of novel device architectures.

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Section: Si-mosfet Hk Gate Stackmentioning

confidence: 99%

Section: Si-mosfet Hk Gate Stackmentioning

confidence: 99%

(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

Larcher

Sereni

Vandelli³

2016

ECS Trans.

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“…However, the performance and reliability of these HKbased gate stacks is strongly affected by the high density of asgrown or process-induced bulk defects. [2,3] On the other hand, the existence of a lot of traps makes HfO 2 suitable for the trapping layer in the charge-trapping memory devices. [4] Thus, it is important to characterize these traps so as to know properties such as the activation energy and density.…”

Section: Introductionmentioning

confidence: 99%

Electron trapping properties at HfO₂/SiO₂interface, studied by Kelvin probe force microscopy and theoretical analysis

Zhang¹

2016

Chinese Phys. B

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Electron trapping properties at the HfO 2 /SiO 2 interface have been measured through Kelvin Probe force microscopy, between room temperature and 90 • C. The electron diffusion in HfO 2 shows a multiple-step process. After injection, electrons diffuse quickly toward the HfO 2 /SiO 2 interface and then diffuse laterally near the interface in two sub-steps: The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers. Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss. In this way, the diffusion coefficient and the average life time at different temperatures were extracted. A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO 2 .

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Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs

Cited by 2 publications

References 14 publications

(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

Electron trapping properties at HfO₂/SiO₂interface, studied by Kelvin probe force microscopy and theoretical analysis

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Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs

Cited by 2 publications

References 14 publications

(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

(Invited) Defect Spectroscopy and Engineering for Nanoscale Electron Device Applications: A Novel Simulation-Based Methodology

Electron trapping properties at HfO2/SiO2interface, studied by Kelvin probe force microscopy and theoretical analysis

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Electron trapping properties at HfO₂/SiO₂interface, studied by Kelvin probe force microscopy and theoretical analysis