Substrate control for large area continuous films of monolayer MoS<sub>2</sub>by atmospheric pressure chemical vapor deposition

Wang, Shanshan; Pacios, Mercè; Bhaskaran, Harish; Warner, Jamie H.

doi:10.1088/0957-4484/27/8/085604

Cited by 84 publications

(77 citation statements)

References 31 publications

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“…As a result, clean monolayer crystals tend to grow only in a specific area where the MoO 3 vapor concentration is relatively low (e.g., at the sides of the substrates) . For this reason, there have been many alternative attempts to control the nucleation density by placing the growth substrate away from the precursor, or adjusting the oxygen flow, argon flow, growth temperature, and the furnace position during the growth process . However, these have all resulted in a nonuniform and position‐dependent crystal quality, a relatively small crystal size, low coverage, or a contaminated film.…”

mentioning

confidence: 99%

Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices

et al. 2017

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Transition metal dichalcogenide (TMDC) monolayers are considered to be potential materials for atomically thin electronics due to their unique electronic and optical properties. However, large-area and uniform growth of TMDC monolayers with large grain sizes is still a considerable challenge. This report presents a simple but effective approach for large-scale and highly crystalline molybdenum disulfide monolayers using a solution-processed precursor deposition. The low supersaturation level, triggered by the evaporation of an extremely thin precursor layer, reduces the nucleation density dramatically under a thermodynamically stable environment, yielding uniform and clean monolayer films and large crystal sizes up to 500 µm. As a result, the photoluminescence exhibits only a small full-width-half-maximum of 48 meV, comparable to that of exfoliated and suspended monolayer crystals. It is confirmed that this growth procedure can be extended to the synthesis of other TMDC monolayers, and robust MoS /WS heterojunction devices are easily prepared using this synthetic procedure due to the large-sized crystals. The heterojunction device shows a fast response time (≈45 ms) and a significantly high photoresponsivity (≈40 AW ) because of the built-in potential and the majority-carrier transport at the n-n junction. These findings indicate an efficient pathway for the fabrication of high-performance 2D optoelectronic devices.

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confidence: 99%

Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices

et al. 2017

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“…On the other hand, the color of the sample after sulfurization process is relatively different with the one of Mo/SiO 2 /Si substrate. It was changed from violet color to dark blue color, which is similar with the color of thin layer MoS 2 grown by CVD method [12][13][14]. Fig.…”

Section: Methodsmentioning

confidence: 59%

Direct Synthesis of Multi-layer MoS\(_2\) Nanodots by Chemical Vapor Deposition

Vuong¹,

Hung²

2018

Comm. in Phys.

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The current work reports a direct synthesis of multi-layer MoS2 nanodots by a chemical vapor deposition method. The morphological, structural and optical properties of the growing MoS2 are investigated by field emission scanning electron microscopy (FESEM), Raman and Photoluminescence (PL) spectroscopy, respectively. High magnification FESEM image reveals a layer of MoS2 nanodots with the average size of about 10 nm. Resonance Raman data exhibits the two active E12g and A1g modes corresponding to in-plane variation of Mo and S atoms centered at 383.3 cm-1 and to out of plane variation of S atoms located at 407.1 cm-1, respectively. The spacing between two peaks is about 23.8 cm-1, which can be used to evaluate the number of MoS2 layer. The Raman spectrum also indicates any intensity enhancement of the A1g peak compared to the E12g peak. This result is elucidated through the quantum confinement effect. The PL emission shows a pronounced peak at 505 nm that is significant blue shift compared to single MoS2 layer. The interpretation of this phenomena is discussed in detail.

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“…So, special attention has been given to CVD as it has a greater possibility to grow large area high-quality uniform mono-and few-layer MoS2 with low manufacturing costs [20][21][22]. CVD growth of MoS2 could be achieved by different Mo source materials such as molybdenum trioxide (MoO3) powder [19,[23][24][25], Mo film [26], ammonium heptamolybdate [21,27], gas source of Mo(CO)6 [20,23,27], and MoCl5 [20,23]. Zhan et al [28] reported the growth of MoS2 film on silicon dioxide (SiO2) substrate by sulfurization of Mo metal film in a two-step CVD process but this approach resulted in a lack of crystallinity and poor electrical properties of MoS2 films [29].…”

Section: Introductionmentioning

confidence: 99%

Effect of different precursors on CVD growth of molybdenum disulfide

Singh

Moun

Singh

2019

Journal of Alloys and Compounds

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Control over thickness, size, and area of chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) flakes is crucial for device application. Herein, we report a quantitative comparison of CVD synthesis of MoS2 on SiO2/Si substrate using three different precursors viz., molybdenum trioxide (MoO3), ammonium heptamolybdate (AHM), and tellurium (Te). A threestep chemical reaction mechanism of evolution of MoS2 from MoO3 micro-crystals is proposed for MoO3 precursor. Furthermore, a strategy based on growth temperature and ratio of amount of precursors is developed to systematically control thickness and area of MoS2 flakes. Our findings show that for large-sized crystalline monolayer MoS2 flakes, MoO3 is a better choice than AHM and Te-assisted synthesis. Moreover, Te as growth promoter, can lower down growth temperature by 250C. This study can be further used to fabricate MoS2 based high-performance electronic devices such as photodetectors, thin film transistors, and sensors.

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Substrate control for large area continuous films of monolayer MoS₂by atmospheric pressure chemical vapor deposition

Cited by 84 publications

References 31 publications

Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices

Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices

Direct Synthesis of Multi-layer MoS\(_2\) Nanodots by Chemical Vapor Deposition

Effect of different precursors on CVD growth of molybdenum disulfide

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Substrate control for large area continuous films of monolayer MoS2by atmospheric pressure chemical vapor deposition

Cited by 84 publications

References 31 publications

Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices

Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices

Direct Synthesis of Multi-layer MoS\(_2\) Nanodots by Chemical Vapor Deposition

Effect of different precursors on CVD growth of molybdenum disulfide

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Substrate control for large area continuous films of monolayer MoS₂by atmospheric pressure chemical vapor deposition