2023
DOI: 10.1039/d3ta04276f
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Substrate controls photovoltage, photocurrent and carrier separation in nanostructured Bi2S3 films

Sherdil Khan,
Sahar Daemi,
Maria Kanwal
et al.

Abstract: Bi2S3 is a narrow bandgap (1.2 eV) semiconductor of interest for the construction of solar cells and photoelectrodes. While many researchers have reported on the use of Bi2S3 as a...

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Cited by 4 publications
(2 citation statements)
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“…This trend suggests that the choice of electrode material significantly impacts the performance of Bi 2 S 3 -based photovoltaic devices. 183 Among the BiOX, BiOCl possessed a large bandgap higher than 3.0 eV, which is not suitable for harvesting solar light for the PEC applications. 195 In addition, due to the long transfer distance of charge carriers, excessively thick films can lead to electron–hole recombination.…”
Section: Pec Applications Of Bismuth Binary and Mixed-anion Compoundsmentioning
confidence: 99%
“…This trend suggests that the choice of electrode material significantly impacts the performance of Bi 2 S 3 -based photovoltaic devices. 183 Among the BiOX, BiOCl possessed a large bandgap higher than 3.0 eV, which is not suitable for harvesting solar light for the PEC applications. 195 In addition, due to the long transfer distance of charge carriers, excessively thick films can lead to electron–hole recombination.…”
Section: Pec Applications Of Bismuth Binary and Mixed-anion Compoundsmentioning
confidence: 99%
“…Solar-driven photoelectrochemical (PEC) water splitting has been broadly regarded as a promising solution for sustainable and decarbonized technology in the quest of green and renewable energy. 1–7 Since TiO 2 photoanodes, researched by Fujishima and Honda, 8,9 were employed to perform water splitting to produce hydrogen, a majority of semiconductors, for example, TiO 2 , 10 α-Fe 2 O 3 , 11–14 Ta 3 N 5 , 15,16 and BiVO 4 , 17–22 have been regarded as ideal photoanodes for PEC water splitting in recent years. Among various candidates, BiVO 4 is the most promising candidate for PEC water oxidation because of a low bandgap (2.4 eV), low cost, and ideal band-edge positions.…”
Section: Introductionmentioning
confidence: 99%