2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) 2014
DOI: 10.1109/pvsc.2014.6925130
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Substrate dependent growth of microcrystalline silicon

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Cited by 8 publications
(9 citation statements)
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“…For the mc-Si:H layers, these values were 30 W, 3.5 Torr, 15 sccm of silane, and 2500 sccm of hydrogen. With these flow rates, the hydrogen dilution ratiodefined here as R ¼ [H 2 ]/[SiH 4 ]was 5 for a-Si:H and 167 for mc-Si:H, consistent with reports by others [18,19].…”
supporting
confidence: 90%
See 1 more Smart Citation
“…For the mc-Si:H layers, these values were 30 W, 3.5 Torr, 15 sccm of silane, and 2500 sccm of hydrogen. With these flow rates, the hydrogen dilution ratiodefined here as R ¼ [H 2 ]/[SiH 4 ]was 5 for a-Si:H and 167 for mc-Si:H, consistent with reports by others [18,19].…”
supporting
confidence: 90%
“…The a‐Si:H and μc‐Si:H films were deposited in a parallel‐plate PECVD tool operating at radio frequency (13.56 MHz) . All depositions were conducted at 250 °C and the time was varied to achieve layers between 0.3 and 84 nm thick.…”
Section: Methodsmentioning
confidence: 99%
“…The cell with an oxygen free FSF ( f CO2 = 0) shows a very low FF and V oc and does not follow the overall trend as given by the material properties of the FSF film deposited on a glass substrate. We attribute this to the pronounced amorphous incubation layer of μc‐Si, which occurs on a‐Si:H covered substrates as reported in . As the thickness of the μc‐Si:H FSF presumably is below the thickness of its amorphous incubation layer, the 20 nm μc‐Si:H FSF might be fully amorphous.…”
Section: Discussionmentioning
confidence: 51%
“…A previous work has shown that an oxygen free FSF ( f CO2 = 0) grown on a‐SiO x :H instead of a‐Si:H provides a high FF as well as a high V oc in SHJ solar cells . This discrepancy supports the assumption of an extended amorphous incubation layer in the case of the μc‐Si:H/a‐Si:H stack, since silicon oxide substrates are known to improve the crystalline growth of μc‐Si:H and to reduce the incubation phase .…”
Section: Discussionmentioning
confidence: 68%
“…Silicon oxide (SiO 2 ) can further reduce undesired parasitic absorption, when used instead of (i)a-Si:H, by acting both as passivation layer [4] and as a better substrate for enhanced nucleation in combination with nc-Si:H material, which is known to have superior optoelectronic properties compared to a-Si:H [5][6][7][8]. SiO 2 layer have to be ultra-thin (< 2 nm) to permit carrier transport by tunneling and as close as possible to stoichiometry [9].…”
Section: Introductionmentioning
confidence: 99%