Substrate-Dependent Ultrafast Charge-Carrier Dynamics: Unveiling the Annealing Effect on Optoelectronic Performance of Sb₂Se₃Thin Films

Tuning Ultrafast Carrier Dynamics and Broadband Photo-Response of High-Performance Sb2Se3 Thin Film Photodetectors: A Substrate Dependent Study

“…Conversely, Sb-rich Sb 2 Se 3 has defects like V se and Sb Se , serving as deep donor level and recombination centers, hence reducing carrier lifetime. − On the other side, intrinsic defects like lattice deformation can produce polarons, accelerating carrier decay and diminishing device performance, particularly at high pump powers. ,, For a detailed understanding of the types of defects present, the EDS results revealed that, apart from quartz, all films exhibited selenium (Se) richness, leading to the creation of shallow acceptor defects like Se Sb . Conversely, the film deposited on quartz displayed selenium deficiency, resulting in the formation of deep donor defects acting as recombination centers, accelerating the recombination process which was also observed in ultrafast carrier dynamics. , On the other hand, the film on p-sapphire, abundant in selenium, resulted in an extended recombination time due to fewer deep defects, thereby affecting the recombination process differently and still shows poor photoconductivity, so needs further analysis.…”

“…Powder XRD pattern (Rigaku-made Mini Flex II of Cu–Kα radiation, λ = 1.5418 Å) confirms the pure phase of alloy (Sb 2 Se 3 ) used in thermal evaporation for thin film deposition . For structural analysis, thin film XRD (Ultima IV X RAY diffractometer) is performed for each film deposited on different substrates.…”