Substrate diode effect on the performance of Silicon Germanium phototransistors

Tegegne, Zerihun Gedeb; Viana, Carlos; Rosales, Marc; Algani, Catherine; Grzeskowiak, Marjorie; Richalot, Elodie

doi:10.1109/mwp.2015.7356678

Cited by 9 publications

(11 citation statements)

References 8 publications

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“…Thus, the difference between the collector and base photocurrent magnitudes shown in Fig. 2 at V be = 0 V corresponds to the photocurrent generated by the substrate diode called substrate photocurrent (I sub ) [14]. This can be computed using the following equation:…”

Section: Experimental Results and Discussion A Substrate Photodmentioning

confidence: 99%

“…As it has been demonstrated in [14], the substrate photocurrent in SiGe HPT has a huge impact on the frequency response of the phototransistor mainly in PD mode. To observe the intrinsic properties of the HPT (that can be used for future SiGe HPT modeling), one needs to remove (de-embed) the substrate response from the raw measured data at each position of the optical fiber and at all frequencies.…”

Section: B Substrate Photocurrent Effect On Opto-microwave Behaviormentioning

confidence: 90%

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Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber

Tegegne

Viana

Grzeskowiak

et al. 2018

IEEE Trans. Electron Devices

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The intrinsic frequency response of silicongermanium heterojunction bipolar phototransistors (HPTs) at 850 nm is studied to be implemented in multimode fiber systems. The experimental analysis of an HPT with an optical window size of 10 × 10 µm 2 is presented. An optomicrowave (OM) scanning near-field optical microscopy is performed to observe the variation of the HPT dynamic behavior versus the illumination location of the phototransistor. The photocurrent generated by the photodiode at the interface between the n ++ subcollector and the p + guard ring is analyzed, and its impact on the performance of the HPT is investigated. Then, we propose a technique to remove the substrate photocurrent effect on the optical transition frequency (f Topt ): f Topt value of 4.1 GHz given by raw measurement results increases up to 6 GHz after removing the substrate response. The influence of the 2-D carrier flows on the HPT intrinsic OM behavior is also studied. Design aspects of SiGe/Si HPT structures are finally discussed as a conclusion.Index Terms-Microwave photonics, opto-microwave scanning near-field optical microscopy (OM-SNOM), siliconbased photodetectors, SiGe phototransistor, substrate effect.

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Section: Experimental Results and Discussion A Substrate Photodmentioning

confidence: 99%

Section: B Substrate Photocurrent Effect On Opto-microwave Behaviormentioning

confidence: 90%

Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber

Tegegne

Viana

Grzeskowiak

et al. 2018

IEEE Trans. Electron Devices

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“…Therefore, looking for the optimum emitter length is crucial to design high speed HBT. The emitter-to-collector transit time delay (τ EC ) can effectively represent the effect of the device scaling on f T and f max as they are linked by equations (1) and (3).…”

Section: A the Impact Of Emitter Length On The Speedmentioning

confidence: 99%

“…In particular, ultra-low-cost silicon based optoelectronic devices are highly desirable for Radio-over-Fiber (RoF) applications within buildings and houses [1], [2]. SiGe Heterojunction bipolar Phototransistors (HPT) is one of the optoelectronic device that are recently proposed for a direct integration with a high speed SiGe technologies using standard bipolar transistors [3]- [9].…”

Section: Introductionmentioning

confidence: 99%

“…However, according to [15], at a given minimum emitter width, the reduction of the emitter length leads to a significant reduction of speed due to the difficulties of the electron flow whereas doubling the emitter width significantly increases the speed. Our laboratory presented the first single layer SiGe HPT in 2003 [4] and we have illustrated the impact of the substrate photo-current on the speed of the HPT in [3] by using the same SiGe HPT topology. This paper is a furtherance of our previous works that explores further the frequency response limitations of the device.…”

Section: Introductionmentioning

confidence: 99%

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Study of Lateral Scaling Impact on the Frequency Performance of SiGe Heterojunction Bipolar Phototransistor

Tegegne

Viana

Grzeskowiak

et al. 2018

IEEE J. Quantum Electron.

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The influence of the lateral scaling such as emitter width and length on the frequency behavior of SiGe bipolar transistor is experimentally studied. Electrical transistors of different emitter sizes are designed and fabricated by using a commercial bipolar transistor technology. The effect of peripheral current and collector current spreading on electrical bipolar transistor performances are analyzed in regards to the state of the art. Furthermore, the lateral scaling effect on SiGe phototransistor electrical and opto-microwave frequency behavior is studied. The impact of the lateral flow of photo-generated carriers toward the optical opening in phototransistor structure is investigated. Moreover, the 2-D carrier flow effect on the opto-microwave frequency behavior of the phototransistor is characterized through optomicrowave scanning near-field optical microscopy measurements, in the course of which the intrinsic parameters, such as transit time and junction capacitances are extracted over the surface of the phototransistor. An intrinsic optical transition frequency of 6.5 GHz is measured for 10 × 10 µm 2 . Portugal, in 2010, and the Ph.D. degree in electronics, optoelectronics and systems from Université Paris-Est, Champs-sur-Marne, France, in 2014.Since 2010, he has been a Researcher with the ESYCOM Laboratory, ESIEE-Paris, Noisy-le-Grand, France. His research interest includes optoelectronic device developments, integration, and packaging for low cost radio-over-fiber technology applications.Jean-Luc Polleux received the master's/Diplôme d'ingénieur degree in microelectronic from ENSEIRB, Bordeaux, France, and the DEA degree in electronic and telecommunications from the University of Bordeaux 1, France, both in 1997, and the Ph.D. degree in the optomicrowave from CNAM, Paris, in 2001. He joined ESIEE-Paris, Université Paris-Est, France, and the joint ESYCOM Laboratory, where he is currently an Associate Professor. He is also an Administrator of Optics'Valley, Ile-de-France region, and the Head of the International Master of Electronics, ESIEE Paris, UPE. He published over 60 scientific publications and two patents. His current research involves microwave-photonics devices and systems for radio-over-fibre applications with special emphasis on microwave phototransistors (SiGe/Si and InGaAs/InP), silicon-based integration and packaging, analogue VCSELs, and opto-microwave devices modeling. He co-organized three international workshops and co-chaired the local committee of the French microwave conference JNM2013. He was a Guest

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Substrate resistivity influence on silicon–germanium phototransistor performance

et al. 2019

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This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low-and the high-resistive silicon substrate are compared. The phototransistor based on lowresistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz).

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Substrate diode effect on the performance of Silicon Germanium phototransistors

Cited by 9 publications

References 8 publications

Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber

Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber

Study of Lateral Scaling Impact on the Frequency Performance of SiGe Heterojunction Bipolar Phototransistor

Substrate resistivity influence on silicon–germanium phototransistor performance

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