Substrate Effect on Low-frequency Noise of synaptic RRAM devices

Vasileiadis, Nikolaos; Mavropoulis, Alexandros; Loukas, Panagiotis; Normand, P.; Sirakoulis, Georgios Ch.; Dimitrakis, Panagiotis

doi:10.1109/vlsi-soc54400.2022.9939652

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Cited by 2 publications

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Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Ling,

Ku,

Chuang

et al. 2024

ACS Appl. Electron. Mater.

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This study investigates the effect of atomic layer annealing (ALA) on the resistive switching characteristics of SiN xbased resistive random access memory (RRAM) devices. The energy transfer occurs in the ALA process via the in situ plasma treatment introduced in each cycle of atomic layer deposition. The ALA treatment reduces nitrogen vacancies and increases the film density of the SiN x layer with a thickness of only 3.5 nm, as revealed by X-ray reflectivity and X-ray photoelectron spectroscopy analyses. Consequently, the SiN x RRAM devices subjected to ALA demonstrate lower operating voltages and improved uniformity in their resistive switching properties. Furthermore, the ALA treatment contributes to a significant enhancement in pulse endurance of over 10 4 cycles and an exceptional retention time exceeding 10 6 seconds at 125 °C. This research provides a promising approach to improving the performance of SiN x RRAM devices characterized by low-voltage operation along with high uniformity and reliability.

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Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Ling,

Ku,

Chuang

et al. 2024

ACS Appl. Electron. Mater.

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show abstract

Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate

Mavropoulis,

Vasileiadis,

Normand

et al. 2023

2023 IEEE 23rd International Conference on Nanotechnology (NANO)

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Substrate Effect on Low-frequency Noise of synaptic RRAM devices

Cited by 2 publications

References 18 publications

Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate

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Substrate Effect on Low-frequency Noise of synaptic RRAM devices

Cited by 2 publications

References 18 publications

Atomic Layer Annealing on Ultrathin SiNx Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Atomic Layer Annealing on Ultrathin SiNx Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate

Contact Info

Product

Resources

About

Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

Atomic Layer Annealing on Ultrathin SiN_x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory