Two-dimensional (2D) ReSe2 has attracted considerable
interest due to its unique anisotropic mechanical, optical, and exitonic
characteristics. Recent transient absorption experiments demonstrated
a prolonged lifetime of photoexcited charge carriers by stacking ReSe2 with MoS2, but the underlying mechanism remains
elusive. Here, by combining time-domain density functional theory
with nonadiabatic molecular dynamics, we investigate the electronic
properties and charge carrier dynamics of 2D ReSe2/MoS2 van der Waals (vdW) heterostructure. ReSe2/MoS2 has a type II band alignment that exhibits spatially distinguished
conduction and valence band edges, and a built-in electric field is
formed due to interface charge transfer. Remarkably, in spite of the
decreased band gap and increased decoherence time, we demonstrate
that the photocarrier lifetime of ReSe2/MoS2 is ∼5 times longer than that of ReSe2, which originates
from the greatly reduced nonadiabatic coupling that suppresses electron–hole
recombination, perfectly explaining the experimental results. These
findings not only provide physical insights into experiments but also
shed light on future design and fabrication of functional optoelectronic
devices based on 2D vdW heterostructures.