Substrate temperature dependence of SQW alloy and superlattice lasers grown by MBE using As2

Foxon, C.T.; Blood, P.; Fletcher, E. D.; Hilton, David; Hulyer, Paul J.; Vening, M.

doi:10.1016/0022-0248(91)91130-3

Cited by 17 publications

(8 citation statements)

References 16 publications

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“…[ 238][239] [355] This increase of 0.04 pm/hr agrees quite well with the predicted GaAs desorption rate of 0.0467 pm/hr predicted for low AsJGa flux ratios and a growth temperature of 635~ 421] However, when dimeric arsenic is used, there is no noticeable change in the growth rate for substrate temperatures between 570~ and 710~ [130] [139] The re-evaporation of gallium is probably inhibited by the higher sticking coefficient of dimeric arsenic, [ 372] along with the subsequent reduction in the quantity of free gallium adsorbed to the surface. [139] The desorption process can be utilized to etch GaAs in-situ.…”

Section: Gallium Desorptionsupporting

confidence: 64%

“…Solid arsenic is loaded into the low-temperature stage, which is responsible for setting and controlling the magnitude of the arsenic flux. [139] Stronger RHEED oscillations are observed for growth with dimeric arsenic than for growth with tetrameric arsenic. [155][ 275] The choice of catalytic materials in the high-temperature stage determines the temperature at which this stage must be operated to obtain dimeric arsenic.…”

Section: Migration-enhanced Epitaxial Buffer Buffer Layers Grown Bymentioning

confidence: 97%

“…[139][313] [432] The dimeric arsenic may reduce either the gallium surface population[ ~39] or the gallium surface mobility, thus preventing gallium agglomeration and oval defect formation. gallium agglomeration from an increased population of gallium on the surface.…”

Section: Oval Defectsmentioning

confidence: 99%

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Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Larkins¹,

Harris²

1995

Molecular Beam Epitaxy

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Section: Gallium Desorptionsupporting

confidence: 64%

Section: Migration-enhanced Epitaxial Buffer Buffer Layers Grown Bymentioning

confidence: 97%

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Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Larkins¹,

Harris²

1995

Molecular Beam Epitaxy

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“…Low threshold current lasers are only obtained at very high growth temperatures, using As4 , where the re-evaporation rate of gallium is very high [13,14], but for As2 [15] this is not required. The origin of this difference is not altogether clear, but it has long been established that the growth mechanisms for the As2 [16] and Aso [17] are different.…”

Section: Y1 Non Radiative Recombination Centres In (Alga)asmentioning

confidence: 99%

State of the Art Molecular Beam Epitaxy of III-V Compounds

Foxon

1995

Acta Phys. Pol. A

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This paper discusses molecular beam epitaxy with particular emphasis on the production of state of the art electronic and optoelectronic low dimensional structures and devices. The molecular beam epitaxy process is outlined briefly and the practical problems associated with producing "state of the art" (Al,Ga)As/GaAs structures are considered. Examples include high mobility electron and hole gases, low threshold current lasers and the multi-quantum well solar cells.

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“…However, the incorporation lunetics of arsenic dimers (As2) [2] differ substantially from those of As4 [3], which leads to improved properties for both quantum wells and lasers grown at conventional MBE temperatures [4]. Because the surface lifetime of As2 is much shorter than AS^, we may expect GaMnAs films grown at low temperature with As2 to he better than corresponding films grown with A S~.…”

mentioning

confidence: 99%

High quality GaMnAs films grown with As/sub 2/

Campion

Foxon

Gallagher

et al.

International Conference on Molecular Bean Epitaxy

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There is a great interest currently in the properties of 111-V based dilute magnetic semiconductors. GaMnAs films grown at low temperature by Molecular Beam Epitaxy (MBE) have been studied by various groups world-wide. Layers are typically grown with low arsenic fluxes to minimise the concentration of native defects (arsenic anti-site defects). The material properties can often be improved by post growth annealing [l], which improves both the ferromagnetic transition temperature and electrical properties.Previously, most films have been grown using tetramers (AS& obtained by direct evaporation of arsenic. However, the incorporation lunetics of arsenic dimers (As2) [2] differ substantially from those of As4 [3], which leads to improved properties for both quantum wells and lasers grown at conventional MBE temperatures [4]. Because the surface lifetime of As2 is much shorter than AS^, we may expect GaMnAs films grown at low temperature with As2 to he better than corresponding films grown with A S~.For GaAs films, as the growth temperature is reduced, there is a transition from layers showing a single X-ray diffraction peak for asymmetric reflections to samples with a double peak, ie at low temperature the lattice parameter of the epitaxial layer is different fiom that of the substrate. This is due to the presence of antisite defects incorporated in the epitaxial films. This transition occurs at a lower temperature for films grown with As2, indicating that the antisite defect density.We have, therefore, grown GaMnAs films using As2 as a function of growth temperature and Mn flux. At high Mn fluxes or high growth temperatures, a three-dimensional (3D) growth mode is observed by reflection high-energy electron diffraction. At lower Mn fluxes or reduced growth temperature a two-dimensional (2D) growth mode is observed. As shown in Figure 1, we have mapped the transition region for a range of Mn fluxes from 0 to 8 x IO-'Torr for growth temperatures in the range 175 to 300'C. Ferromagnetic transition temperatures up to 75K are obtained for un-annealed films grown close to this 3D to 2D transition region as shown in Figure 2. The best samples have very high metallic conductivity and appear to be very homogeneous. After in-situ post growth annealing, the best samples show a transition temperature of 112K, comparable or better than previously reported values.

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Substrate temperature dependence of SQW alloy and superlattice lasers grown by MBE using As2

Cited by 17 publications

References 16 publications

Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

State of the Art Molecular Beam Epitaxy of III-V Compounds

High quality GaMnAs films grown with As/sub 2/

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