Substrate temperature dependence of the phase transition behavior of AlN layers grown on Si(111) substrate by metalorganic chemical vapor deposition

Kim, Yoon Hak; Kim, C.S.; Noh, Young-Kyun; Kim, Moon‐Deock; Oh, Jae‐Eung

doi:10.1016/j.jcrysgro.2011.08.033

Cited by 5 publications

(5 citation statements)

References 18 publications

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“…The others form cubic polycrystalline layers with hexagonal inclusions. The metastable cubic phase of aluminum nitride can be stabilized by none-equilibrium synthesis conditions [36,37], structural replication [38], and high stresses (pressures) [39]. hexagonal inclusions.…”

Section: Nitrogen To Argon Ratio 0%mentioning

confidence: 99%

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

et al. 2018

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This work compares the deposition of aluminum nitride by magnetron sputtering on silicon to multilayer ceramic substrates. The variation of sputter parameters in a wide range following a fractional factorial experimental design generates diverse crystallographic properties of the layers. Crystal growth, composition, and stress are distinguished because of substrate morphology and thermal conditions. The best c-axis orientation of aluminum nitride emerges on ceramic substrates at a heater temperature of 150 • C and sputter power of 400 W. Layers deposited on ceramic show stronger c-axis texture than those deposited on silicon due to higher surface temperature. The nucleation differs significantly dependent on the substrate. It is demonstrated that a ceramic substrate material with an adapted coefficient of thermal expansion to aluminum nitride allows reducing the layer stress considerably, independent on process temperature. Layers sputtered on silicon partly peeled off, while they adhere well on ceramic without crack formation. Direct deposition on ceramic enables thus the development of optimized layers, avoiding restrictions by stress compensating needs affecting functional properties.

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Section: Nitrogen To Argon Ratio 0%mentioning

confidence: 99%

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

et al. 2018

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“…In particular, nitride-on-silicon structures are considered to be excellent candidates for unique design architectures and for creating devices for high-power applications. Therefore, a great deal of effort has been concentrated on growing compound semiconductors on Si substrates [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study

et al. 2015

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“…Several methods were used to solve the problems, such as using a high temperature AlN buffer, or inserting a low temperature AlN interlayer or superlattice. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] However, the ability of strain control is still not sufficient to solve the crack problem completely. Further techniques should be developed, and Yamaguchi et al's works give a hint.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of GaN-based metal–semiconductor–metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

Lin

Huang

2014

Jpn. J. Appl. Phys.

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A simple thermal cycle annealing (TCA) process was used to improve the quality of GaN grown on a Si substrate. The X-ray diffraction (XRD) and etch pit density (EPD) results revealed that using more process cycles, the defect density cannot be further reduced. However, the performance of GaN-based metal–semiconductor–metal (MSM) photodiodes (PDs) prepared on Si substrates showed significant improvement. With a two-cycle TCA process, it is found that the dark current of the device was only 1.46 × 10−11 A, and the photo-to-dark-current contrast ratio was about 1.33 × 105 at 5 V. Also, the UV/visible rejection ratios can reach as high as 1077.

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Substrate temperature dependence of the phase transition behavior of AlN layers grown on Si(111) substrate by metalorganic chemical vapor deposition

Cited by 5 publications

References 18 publications

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study

Performance improvement of GaN-based metal–semiconductor–metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

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