Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications

Chen, Han-Bin; Hsu, Chia-Hsun; Wu, Wan-Yu; Zhang, Wen-Zhi; Zhang, Jing; Zhang, Xiao-Ying; Gao, Peng; Wuu, Dong-Sing; Lai, Feng-Min; Lien, Shui-Yang; Zhu, Wen-Zhang

doi:10.1016/j.apsusc.2024.160305

Applied Surface Science

2024

DOI: 10.1016/j.apsusc.2024.160305

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Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications

Han-Bin Chen,

Chia-Hsun Hsu,

Wan-Yu Wu

et al.

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Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application

Zhang,

Huang,

Cao

et al. 2024

Electronics

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Uncrystallized indium-gallium-zinc-oxide (InGaZnO) thin-film transistors (TFTs) combined with an aluminum nitride (AlN) dielectric have been used to promote performance and steadiness. However, the high deposition temperature of AlN films limits their application in InGaZnO flexible TFTs. In this work, AlN layers were deposited via low-temperature plasma-enhanced atomic layer deposition (PEALD), and InGaZnO films were fabricated via high-power impulse magnetron sputtering (HIPIMS). The band alignment of the AlN/InGaZnO heterojunction was studied using the X-ray photoemission spectrum and ultraviolet visible transmittance spectrum. It was found that the AlN/InGaZnO system exhibited a staggered band alignment with a valence band offset ΔEv of −1.25 ± 0.05 eV and a conduction band offset ΔEc of 4.01 ± 0.05 eV. The results imply that PEALD AlN could be more useful for surface passivation than a gate dielectric to promote InGaZnO device reliability under atmospheric exposure.

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Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application

Zhang,

Huang,

Cao

et al. 2024

Electronics

View full text Add to dashboard Cite

show abstract

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Substrate temperature effects on PEALD HfAlO dielectric films for IGZO-TFT applications

Cited by 1 publication

References 59 publications

Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application

Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application

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