Substrates for gallium nitride epitaxy

Liu, L.; Edgar, James H.

doi:10.1016/s0927-796x(02)00008-6

Cited by 774 publications

(498 citation statements)

References 406 publications

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“…Even with the interfacial buffer, however, the quality of GaN films grown on 2D materials is significantly worse than that on a conventional SiC or sapphire substrate. In the best case, GaN on AlN/h-BN, the measured defect density (1.6 Â 10 10 cm À 2 ) is greater than that from conventional GaN epitaxial films grown on sapphire by more than one order of magnitude and surface roughness was not as low as that of conventional GaN epitaxial films on sapphire 10,15 . Having considering the fact that an AlN buffer has also been an essential component for conventional growth of high-quality GaN films on sapphire substrates 15 , different growth strategies are required for the epitaxy on 2D materials.…”

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confidence: 81%

“…In the best case, GaN on AlN/h-BN, the measured defect density (1.6 Â 10 10 cm À 2 ) is greater than that from conventional GaN epitaxial films grown on sapphire by more than one order of magnitude and surface roughness was not as low as that of conventional GaN epitaxial films on sapphire 10,15 . Having considering the fact that an AlN buffer has also been an essential component for conventional growth of high-quality GaN films on sapphire substrates 15 , different growth strategies are required for the epitaxy on 2D materials. Moreover, buffered growth is not applicable for the growth of 2D on 2D materials where direct contact of those materials makes device functions 3,4 and also for the growth of vertical electronic devices that require formation of initial films with high electrical conductivity 15 .…”

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confidence: 81%

“…Having considering the fact that an AlN buffer has also been an essential component for conventional growth of high-quality GaN films on sapphire substrates 15 , different growth strategies are required for the epitaxy on 2D materials. Moreover, buffered growth is not applicable for the growth of 2D on 2D materials where direct contact of those materials makes device functions 3,4 and also for the growth of vertical electronic devices that require formation of initial films with high electrical conductivity 15 .…”

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confidence: 99%

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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Kim¹,

Bayram²,

Park³

et al. 2014

Nat Commun

360

299

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There are numerous studies on the growth of planar films on sp 2 -bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline quality is not comparable with the films grown on sp 3 -bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and transferred onto arbitrary substrates. The post-released graphene/SiC substrate is reused for multiple growth and transfer cycles of GaN films. We demonstrate fully functional blue light-emitting diodes (LEDs) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

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confidence: 81%

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confidence: 81%

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confidence: 99%

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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Kim¹,

Bayram²,

Park³

et al. 2014

Nat Commun

360

299

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“…Reviews focusing on both present and future applications exploiting heteroepitaxy of Ge (or, SiGe alloys), GaAs, GaN can be found in Refs. [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Bergamaschini

Salvalaglio

Backofen

et al. 2016

Advances in Physics: X

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Semiconductor heteroepitaxy involves a wealth of qualitatively different, competing phenomena. Examples include threedimensional island formation, injection of dislocations, mixing between film and substrate atoms. Their relative importance depends on the specific growth conditions, giving rise to a very complex scenario. The need for an optimal control over heteroepitaxial films and/or nanostructures is widespread: semiconductor epitaxy by molecular beam epitaxy or chemical vapour deposition is nowadays exploited also in industrial environments. Simulation models can be precious in limiting the parameter space to be sampled while aiming at films/nanostructures with the desired properties. In order to be appealing (and useful) to an applied audience, such models must yield predictions directly comparable with experimental data. This implies matching typical time scales and sizes, while offering a satisfactory description of the main physical driving forces. It is the aim of the present review to show that continuum models of semiconductor heteroepitaxy evolved significantly, providing a promising tool (even a working tool, in some cases) to comply with the above requirements. Several examples, spanning from the nanometre to the micron scale, are illustrated. Current limitations and future research directions are also discussed.

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“…These techniques, however, utilize highly reactive nitrogen sources such as NH 3 or N 2 plasma, which cause nitridation of the substrate surfaces just before the epitaxial growth. This limits the substrates for the epitaxial growth of group III nitrides to chemically stable materials such as Al 2 O 3 , SiC and GaAs [3,4]. We have recently shown that the use of the PLD technique for the epitaxial growth of group III nitrides is advantageous over the conventional growth techniques in that it does not require highly reactive nitrogen sources [5][6][7][8][9][10][11].…”

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confidence: 99%

Structural Properties of Group III Nitrides Grown on SrTiO ₃ (111) Substrates by Pulsed Laser Deposition

Ohta

Fujioka

Kawano

et al. 2002

phys. stat. sol. (c)

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. Hg; 81.15.Fg We have grown group III nitrides on SrTiO 3 (STO) substrates using pulsed laser deposition (PLD) and investigated their structural properties by high resolution X-ray diffraction (HRXRD) and reflection high energy electron diffraction (RHEED). We have found that AlN and GaN grow epitaxially on STO (111) substrates. The epitaxial relationship between the nitrides and SrTiO 3 substrates is nitrides(0001) || SrTiO 3 (111) and nitrides[10--10] || SrTiO 3 [11--2]. The in-plane alignment is rotated by 30 along the c-axis from that expected by the notion of lattice matching. It has also been found that AlN grown on SrTiO 3 is dilated by 0.4% in the [0001] direction due to the lattice mismatch and the smaller thermal contraction rate.

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Substrates for gallium nitride epitaxy

Cited by 774 publications

References 406 publications

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Structural Properties of Group III Nitrides Grown on SrTiO ₃ (111) Substrates by Pulsed Laser Deposition

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Substrates for gallium nitride epitaxy

Cited by 774 publications

References 406 publications

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Continuum modelling of semiconductor heteroepitaxy: an applied perspective

Structural Properties of Group III Nitrides Grown on SrTiO 3 (111) Substrates by Pulsed Laser Deposition

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Product

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Structural Properties of Group III Nitrides Grown on SrTiO ₃ (111) Substrates by Pulsed Laser Deposition