Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: A study by high-resolution Rutherford backscattering

Dash, Saroj P.; Goll, D.; Carstanjen, H. D.

doi:10.1063/1.2717525

Cited by 22 publications

(19 citation statements)

References 20 publications

(20 reference statements)

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“…1a shows, we can fit our experimental data very well in this way, which we cannot do otherwise. It should be noted that this result is different from results for Co growth on Si(100) at room temperature by our group [13] (see also Fig. 2c) and by Meyerheim et al [9], where only an incorporation of Co in the top-most Si layer was observed.…”

Section: Resultscontrasting

confidence: 54%

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Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Dash¹,

Goll²,

Carstanjen³

2008

Appl. Phys. A

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Highly resolved Co depth profiles have been obtained during the initial stages of Co growth on Si(100) at low temperature (−60 • C) by in situ high-resolution Rutherford backscattering spectrometry. We found extensive Co in-diffusion in the submonolayer growth regime even at this low temperature, besides Co on top of the Si surface. The amount of diffused-in Co is larger than the amount of Co at the Si surface. Every second Si layer is depleted of Co, starting at the Si surface, thus giving rise to compositional oscillations of Co in the Si(100) lattice. At this low temperature the growth of metallic Co on the Si surface is observed at 0.1 ML of deposited Co, which continues for higher coverages. At much higher coverage (5.93 ML of Co) almost exclusively low Co content silicides are formed at the Co/Si interface. The data presented here are compared with previous room temperature deposition data and are different in several aspects.PACS 68.55.ag; 82.80.Yc

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Section: Resultscontrasting

confidence: 54%

“…• C. For direct comparison with the low temperature growth data presented here, Co HRBS spectra of a sample grown at room temperature [13] (22…”

Section: Resultsmentioning

confidence: 99%

Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Dash¹,

Goll²,

Carstanjen³

2008

Appl. Phys. A

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“…This is different from the case of Co growth on Si (100) at room temperature, where -besides Co at the surface -pronounced subsurface enrichment of Co was observed [23]. In the case of 0.0325 MLs of Fe on Si (100), pronounced oscillations in the Fe concentration were observed due to preferential occupation of every second Si layer with Fe atoms.…”

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confidence: 54%

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Dash

Carstanjen

2011

Physica Status Solidi (b)

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The characterization of ferromagnet‐semiconductor interfaces with monolayer (ML) depth resolution is an important issue in the development of spin injection devices. In this article, highly resolved depth distributions of Fe have been measured during the initial stages of growth of Fe on Si (100) at room temperature by in situ high‐resolution Rutherford backscattering spectrometry. Extensive in‐diffusion of Fe has been observed even for the coverage of 0.0325 ML of Fe. At this coverage the Si crystal structure is apparently still conserved. Every second Si layer is depleted of Fe, thus giving rise to compositional oscillations of Fe. At higher coverages strong interdiffusion occurs resulting in the formation of silicides at the interface. Even at 9.2 ML of Fe coverage, no pure Fe layers were observed.

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“…[1][2][3][4][5] The formation of interfacial compounds plays an important role in the structure and physical properties of metallic films supported on semiconductor substrates. [1][2][3][4][5] The formation of interfacial compounds plays an important role in the structure and physical properties of metallic films supported on semiconductor substrates.…”

Section: Introductionmentioning

confidence: 99%

Effects of Si capping layers on the properties of ultrathin Co/Ir(111) films

Tsay

Liou

Chen

et al. 2009

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Surface compositions and annealing effects for ultrathin Co/Ir͑111͒ films influenced by Si capping layers have been investigated. On the surface of Co/Ir͑111͒ films, Si adatoms are chemically active in the formation of Co-Si interfaces. Low-energy electron diffraction observations reveal that Si-Co interfaces is disordered in the long range. From sputtering profiling measurements, alloy formations occur at the interfacial layers, while pure cobalt remains on the Ir͑111͒. After depositing submonolayer silicon on Co/Ir͑111͒, the relative easy axis of magnetization in the polar geometry is mainly attributed to the positive interface anisotropy of the Co/Ir interface. The formation of nonmagnetic Co-Si compounds plays a dominant role in reducing the effectiveness of magnetic layers. Below 500 K, the interdiffusion of Si into the underlying Co layer occurs. Further interaction of Si atoms with Co layers and interdiffusion at the Co-Ir interface are observed at higher temperatures. This causes no detectable magnetic hysteresis after annealing up to 800 K.

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Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: A study by high-resolution Rutherford backscattering

Abstract: Study of interdiffusion between thin Y-Ba-Cu-O films and MgO substrates by applying Rutherford backscattering spectrometry combined with scanning tunneling microscopy

Cited by 22 publications

References 20 publications

Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Near-surface compositional oscillations of Co diffused into Si(100) at -60 °C: a study by high-resolution Rutherford backscattering

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Effects of Si capping layers on the properties of ultrathin Co/Ir(111) films

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