2014
DOI: 10.1016/j.engfracmech.2014.02.016
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Subsurface nanocracking in monocrystalline Si (001) induced by nanoscratching

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Cited by 31 publications
(8 citation statements)
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“…5a, a high density of non-uniform dislocations accompanying with the lateral crack appeared and approximatly propagated to the depth of 0.52 μm. The crack manifested itself as 'a coarse band' due to Moiré fringes [19,20]. In this work, the lateral cracks emanated from the immediate bottom of the surface and fully extended to the adjoining surface of 0.6 μm in width.…”
Section: Original Subsurface Structure Of Rb-sicmentioning
confidence: 63%
See 1 more Smart Citation
“…5a, a high density of non-uniform dislocations accompanying with the lateral crack appeared and approximatly propagated to the depth of 0.52 μm. The crack manifested itself as 'a coarse band' due to Moiré fringes [19,20]. In this work, the lateral cracks emanated from the immediate bottom of the surface and fully extended to the adjoining surface of 0.6 μm in width.…”
Section: Original Subsurface Structure Of Rb-sicmentioning
confidence: 63%
“…It is apparent that the crack path was microscopically deflected over about 70℃ from the initial direction. Such reorientation might be related to the interaction with the emitted defects (e.g., dislocations [21]) when a crack approaches the last stage of its propagation, it may deviate away from the initial direction, suggesting the complexity of crack propagation [19].…”
Section: Original Subsurface Structure Of Rb-sicmentioning
confidence: 99%
“…Three typical single-point diamond scratchings consist of instrumented nanoscratching [65], atomic force microscopy [66], and precision motion stage scratching [67]. However, the common characteristic of three scratchings is the speed at micrometer per second, which is 6 to 8 orders of magnitude lower than those of grinding.…”
Section: Understanding the Residual Stresses Formation Based On Singlmentioning
confidence: 97%
“…The residual stress and its distribution in the ground surface/ subsurface layer are generally influenced by the following Int J Adv Manuf Technol factors: grinding wheel characteristics (i.e., abrasive type and distribution, porosity), dressing techniques, grinding parameters, cooling conditions, and workpiece material properties [31,58,[61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76][77].…”
Section: Influential Factors On Grinding-induced Residual Stressesmentioning
confidence: 99%
“…Using the indentation test of silicon, Yoshino et al [10,11] demonstrated this case by finite element method (FEM) and experimental work during the machining process. Recently, Tang and Zhang [12] studied the nanoscratching induced nanocracking in the subsurface of monocrystalline silicon at ambient temperature. Chrobak et al [13] found that the plasticity of silicon determined by dislocations or by transformations between phases depends on the shape and dimension of silicon, and reported that the plasticity of bulk silicon dominates by phase transformations, whereas that of silicon nanoparticles display dislocation-driven.…”
Section: Introductionmentioning
confidence: 99%