2010 53rd IEEE International Midwest Symposium on Circuits and Systems 2010
DOI: 10.1109/mwscas.2010.5548661
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Subthreshold CMOS active inductors with applications to low-power injection-locked oscillators for passive wireless microsystems

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Cited by 10 publications
(4 citation statements)
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“…In addition, the work that explores the intrinsic relation between large impedance variations of active inductors and the lock range of injection-locked active inductor oscillators is completed. The theoretical findings and the demonstrated example result in good understanding of improving the lock range of injection-locked oscillators in terms of design parameters [117,118,119].…”
Section: Discussionmentioning
confidence: 99%
“…In addition, the work that explores the intrinsic relation between large impedance variations of active inductors and the lock range of injection-locked active inductor oscillators is completed. The theoretical findings and the demonstrated example result in good understanding of improving the lock range of injection-locked oscillators in terms of design parameters [117,118,119].…”
Section: Discussionmentioning
confidence: 99%
“…In addition, the work that explores the intrinsic relation between large impedance variations of active inductors and the lock range of injection-locked active inductor oscillators is completed. The theoretical findings and the demonstrated example result in good understanding of improving the lock range of injection-locked oscillators in terms of design parameters [117,118,119].…”
Section: Discussionmentioning
confidence: 99%
“…However, to obtain adequate transconductance with sub-threshold bias, the device dimension has to be increased. This results high value device capacitance (mainly Cgs) and high output impedance and will degrade the wide band performance [14]. As a result, design of LNA with wideband input matching and broad-band gain performance becomes very difficult, while maintaining low power.…”
Section: Circuit Analysismentioning
confidence: 99%