Subthreshold Current Suppression in ReS₂ Nanosheet-Based Field-Effect Transistors at High Temperatures

Abstract

Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention due to its potential applications in field-effect transistors (FETs), photodetectors, and memories. In this work, we investigate the suppression of the subthreshold current during the forward voltage gate sweep, leading to an inversion of the hysteresis in the transfer characteristics of ReS2 nanosheet-based FETs from clockwise to anticlockwise. We explore the impact of temperature, sweeping gate voltage, and pressure on this behavior. Notably, the suppression in current within the subthreshold region coincides with a peak in gate current, which increases beyond a specific temperature but remains unaffected by pressure. We attribute both the suppression in drain current and the presence of peak in gate current to the charge/discharge process of gate oxide traps by thermal-assisted tunnelling. The suppression of the subthreshold current at high temperatures not only reduces power consumption but also extends the operational temperature range of ReS2 nanosheet-based FETs.

Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K

“…When the temperature reaches 475 K, the ∆SS abnormally increases. This may be related to the fact that the oxygen vacancies generated by thermal excitation provide more traps, and charge capture occurs in the gate oxide through thermally assisted tunnelling, leading to an increase in ∆SS [28].…”

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

“…The recent surge of interest in two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) 1–6 and single elemental materials, 7 has enabled tremendous progress in a broad range of applications, such as electronics, 8,9 optoelectronics, 10,11 spintronics, 12,13 non-volatile memories, 14 and neuromorphic computing. 15,16 In this regard, single elemental 2D materials, such as graphene, 17–19 phosphorene, 14,20 silicene, 21,22 and others, have gained much attention due to their superior properties.…”

Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs

“…They are not detrimental to device performance due to the intrinsic advantage of CaF 2 , but the problem cannot be avoided [ 37 ]. The hysteresis is also observed in ReS 2 FETs, and it is subjected to variations in temperature, sweeping gate voltage, and pressure during experiments, demonstrating the existence of a charge-trapping and de-trapping effect [ 38 ].…”