Subthreshold Performance Improvement of Underlapped FinFET Using Workfunction Modulated Dual-metal Gate Technique

Daga, Mitali; Mishra, Guru Prasad

doi:10.1007/s12633-020-00550-x

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Cmos Inverter Tid Response1

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2021

2024

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Cited by 13 publications

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“…Moreover, gate workfuction of the device is directly proportional to threshold voltage. The threshold voltage of MGW device is more as compared to the SGW device and high V th devices are mostly preferable for space applications [15,21,[30][31][32][42][43][44][45][46][47].…”

Section: Cmos Inverter Tid Responsementioning

confidence: 99%

Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate

Ray,

Naugarhiya,

Mishra

2024

Phys. Scr.

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The total ionizing dose (TID) effect of modulated gate workfunction (MGW) FinFET based CMOS inverter is designed and analyzed. The post radiation analysis of the voltage transfer characteristics, noise margin and propagation delay are demonstrated. The incorporation workfunction modulation engineering enhances the OFF-state performance, and maintains positive threshold voltage for both the pre and post radiation condition. 2-decade improvement is noticed for the both n-FinFET and p-FinFET. In addition the proposed technique offers minimum propagation delay time and acceptable noise margin range even after 2000 krad of radiation dose. The analysis and comparison of the results is done by the 3-D TCAD simulator.

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