Successive Approximation RF Reflectometer for Antenna Tuning in Cellular Handheld Devices

Solomko, Valentyn; Bauder, Rudiger; Thomas, Anthony

doi:10.1109/tcsi.2017.2765325

Cited by 6 publications

(1 citation statement)

References 19 publications

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“…Such a method is suitable for PA designs in III-V technologies where the transmission lines show lower loss than in CMOS technologies. In [12] and [16], a directional coupler is placed between the PA output matching network and output pad to extract the incident and reflected waves from the main signal path, the amplitudes of which are then measured by envelope detectors. This method normally can only provide a scalar detection of the mismatch condition and the insertion of the cascaded coupler in the signal path is not functional to the implementation of the output matching, therefore resulting in extra size and increased losses.…”

Section: Active Load Impedance and Sensing Techniquesmentioning

confidence: 99%

A Low-Power Reflection-Coefficient Sensor for 28-GHz Beamforming Transmitters in 22-nm FD-SOI CMOS

Zhang

Mangraviti

Nguyen

et al. 2021

IEEE J. Solid-State Circuits

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Active load impedance variations in a phased array transmitter cause significant power amplifier (PA) performance degradation, in terms of output power, linearity, and power-added efficiency, which are key parameters to enable high-speed data throughputs using spectrally efficient modulation schemes. The system performance can be restored by using PAs having active or passive reconfigurability with the help of antenna impedance sensors. This article presents a low-power reflection-coefficient sensor for 5G millimeter-wave phased-array applications. The complex load impedance of the PA is determined based on the complex voltage over a sensing element, which can be integrated and co-designed with the PA output matching network, with minimal loss (<0.2 dB) and a negligible area penalty. A full-range phase detector with improved detection resolution is proposed, enabling an amplitude-insensitive phase detection. Fabricated in a 22 nm FD-SOI process, the sensor prototype occupies a silicon area of 0.024 mm 2 and consumes 13.2 mW power. The sensor demonstrates a wide detection range with || up to 0.7 (VSWR 5.67) in a load-pull test at 28 GHz. From circle of 0.2 up to 0.7, the maximum detection errors in the magnitude and phase of the are 0.14 • and 40 • , respectively.

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Section: Active Load Impedance and Sensing Techniquesmentioning

confidence: 99%