Suitability and Performance Evaluation of Active Rectifier Topologies for More Electric Aircraft

Multi-Objective Comparative Analysis of Active Modular Rectifier Architectures for a More Electric Aircraft

“…Thus, for a maximum theoretical linear m of 1.15 [32], a singlestage rectification possibility arises if V conv ≤ 109 V AC as depicted in Figure 2b. Consequently, in order to replace the passive ATRU for an active boost-type rectifier while fulfilling the DO-160G operating requirements, two different scenarios are possible [28]:…”

“…From the analysis results, in a previous work [28], it was concluded that, among the active rectifier topologies, two-level boost configurations were preferred for this application due to their relatively high efficiency, low filtering efforts required at relatively higher switching frequencies (comparable to three-level topologies at ≈ 80-100 kHz), the low number of power devices, and simplicity. Concretely, single-stage configuration presents greater potential in terms of efficiency and simplicity.…”

“…The suitability of active rectifiers and a comparisons among different topologies in MEA applications are presented in a previous work by the authors [28], in which a twolevel boost, three-level NPC, and T-type are compared and benchmarked with an ATRU. As a result, two-level boost topology had the highest efficiency and high power quality at relatively higher switching frequencies due to implementation of WBG technology.…”

“…From two operating scenarios presented above, a topology assessment is performed based on the methodology proposed in [33] to demonstrate the suitability of active rectifier topologies in MEA applications [28]. The potential active rectifier topologies are selected from the literature, being two-level boost [7,8,14,23,34], NPC [14,35,36] and T-type [23,35] topologies, and they are benchmarked with an ATRU model, based on [7,37].…”

“…Hence, for the specified operating scenario and the power rating under comparative study, ST-SCTW90N65G2V SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and GeneSiC-GC50MPS06-247 Schottky diode semiconductors were selected as no lower blocking voltage rating SiC semiconductors were found in the market, and, GaN devices do not reach a current rating as high as SiC devices. More details of the active topology selection, comparison procedure, and numerical results can be found in [28].…”