Sulfur: A donor dopant for<i>n</i>-type diamond semiconductors

Sakaguchi, Isao; N.-Gamo, Mikka; Kikuchi, Yuko; Yasu, Eiji; Haneda, Hajime; Suzuki, Toshimitsu; Ando, Toshihiro

doi:10.1103/physrevb.60.r2139

Cited by 208 publications

(86 citation statements)

References 15 publications

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“…However, there is a lack of clarity in the role of sulfur in these materials. For example, it seems clear that early reports [112,113] of shallow donors with an activation energy of 0.38 eV actually relate to p-type conduction from the acceptor level of substitutional boron unintentionally incorporated due to contamination from the CVD reactor [114].…”

Section: Chalcogen Donorsmentioning

confidence: 97%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p‐type diamond is routinely available using boron, n‐type material via impurity doping during the growth of diamond has historically been limited in success, partly because nitrogen is a hyper‐deep donor, but compounded by the compact lattice leading to low solubilities for alternative species. Implantation doping is often hampered by persistent residual damage leading to significant levels of compensation and the formation of dopant complexes with lattice vacancies. Experiment has been augmented by the application of quantum‐chemical methods to assess the likely properties should specific impurities or impurity complexes be realisable in real materials. The review outlines many of the doping strategies explored for diamond, including simple impurity doping and co‐doping. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Chalcogen Donorsmentioning

confidence: 97%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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“…This means that dopants which are routinely used to n-dope Si, such as P or As, cannot easily be used for diamond. The development of a successful n-doping process has taken a considerable time, and only very recently have a few reports appeared from a group in NIRIM claiming success in this area (Koizumi et al 1998;Sakaguchi et al 1999). Despite these difficulties, diamond-based devices are gradually beginning to appear, and may become the material of choice for electronic applications involving high power and/or high temperature.…”

Section: P W Maymentioning

confidence: 99%

Diamond thin films: a 21st-century material

May

2000

Philosophical Transactions of the Royal Society of London. Seri

607

193

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Diamond has some of the most extreme physical properties of any material, yet its practical use in science or engineering has been limited due its scarcity and expense. With the recent development of techniques for depositing thin films of diamond on a variety of substrate materials, we now have the ability to exploit these superlative properties in many new and exciting applications. In this paper, we shall explain the basic science and technology underlying the chemical vapour deposition of diamond thin films, and show how this is leading to the development of diamond as a 21st century engineering material.

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“…Many researchers have studied dopants including nitrogen, sulfur, oxygen and phosphorous inserted into single or polycrystalline diamond by ion-implantation or growth during chemical vapour deposition (CVD) process. [1][2][3] Substitutional nitrogen acted as donors that caused electrical conduction with an activation energy of ≈1.7 eV in natural diamond, which was too high for room-temperature activation. 4 Studies on diamond-containing phosphorous donors showed that the activation energy for conduction was 0.4-0.6 eV.…”

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confidence: 99%

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

Coathup

et al. 2017

Applied Physics Letters

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The impedance spectroscopy measurements were used to investigate the separated contributions of diamond grains and grain boundaries (GBs), giving an insight of p-type to ntype conductivity conversion in O + -implanted ultrananocrystalline diamond (UNCD) films. It is found that both diamond grains and GBs promote the conductivity in O + -implanted UNCD films, in which GBs make at least half contribution. The p-type conductivity in O + -implanted samples is a result of H-terminated diamond grains, while n-type conductive samples is closely correlated to O-terminated O + -implanted diamond grains and GBs in the films. The results also suggest that low resistance of GBs is preferable to obtain high mobility n-type conductive UNCD film.

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Sulfur: A donor dopant forn-type diamond semiconductors

Cited by 208 publications

References 15 publications

Theoretical models for doping diamond for semiconductor applications

Theoretical models for doping diamond for semiconductor applications

Diamond thin films: a 21st-century material

An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

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