Sulfur passivation of 3C-SiC thin film

Su, Jinzhan; Yang, Ying; Zhang, Xuhui; Wang, Hao; Zhu, Longxiang

doi:10.1016/j.jcrysgro.2018.09.025

Cited by 4 publications

(2 citation statements)

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“…Sulphur (S) passivation is another effective method to passivate a 4H-SiC surface. In the literature, Su et al [16] studied the S passivation of 3C-SiC thin films and compared the passivation effects achieved by different solutions, as shown in table 1. The samples were characterized by XPS spectroscopy, and the results are shown in figure 19.…”

Section: Other Passivation Methodsmentioning

confidence: 99%

“…Furthermore, Ichikawa et al [15] also demonstrated that hydrogen from acidic solutions can passivate 4H-SiC surface defect states via generating Si-H and C-H bonds. In addition, Su et al [16] studied sulfur (S) passivation of the SiC surface and found that the Si-S bonds and C-S bonds can reduce the density of surface defect states to a large extent. The above literature reports demonstrate that light elements like N, H, S are effective to passivate a 4H-SiC surface or interface.…”

Section: Introductionmentioning

confidence: 99%

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Surface defects in 4H-SiC: properties, characterizations and passivation schemes

Mao

Cui

Xiong

et al. 2023

Semicond. Sci. Technol.

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Silicon carbide (SiC) is a typical wide band-gap semiconductor material, and exhibit excellent physical properties like high electron saturated drift velocity, high breakdown field, etc. SiC material contains many polytypes, among them, 4H-SiC is almost the most popular polytype as it possesses suitable band-gap and high electron saturated drift velocity. In order to produce 4H-SiC power devices with high barrier voltage over several thousand volts, minority carrier lifetime of 4H-SiC single crystal must be carefully managed. In general, both bulk defects and surface defects in 4H-SiC can reduce the minority carrier lifetime. Nevertheless, as surface defects have received less attention in publications, this study reviews surface defects in 4H-SiC. Surface defects in 4H-SiC can be classified into a number of categories like triangle defect、pit、carrot, etc. This paper discusses each one individually followed by the introduction of industrial feasible methods to characterize them. Subsequently, the impact of surface defects on minority carrier lifetime is analyzed and discussed. At last, a particular emphasis is put on discussing various passivation schemes and their effects on minority carrier lifetime of 4H-SiC single crystal. Overall, this review paper aims to help young researchers comprehend surface defects in 4H-SiC single crystal material.

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Section: Other Passivation Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%