Sulphur diffusion in CdTe and the phase diagram of the CdS–CdTe pseudo-binary alloy

Lane, David W.; Conibeer, Gavin; Wood, David; Rogers, Keith; Capper, P.; Romani, S.; Hearne, Sean J.

doi:10.1016/s0022-0248(98)00813-6

Cited by 42 publications

(23 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…131 The formation of a CdS x Te 1Àx layer at the interface results, with x not exceeding 0Á06 in accordance with the CdTe/CdS phase diagrams, though layers of higher S content may grow under non-equilibrium conditions. 132,133 The diffusion of S decreases the thickness of the CdS film and can eventually lead to the formation of shunts across the CdS/CdTe junction. Therefore, a thermal treatment of the CdS layer prior to CdTe deposition is frequently employed.…”

Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

358

192

View full text Add to dashboard Cite

Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

show abstract

Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

358

192

View full text Add to dashboard Cite

show abstract

“…In this letter numerical simulations of diffusion are carried out to determine its impact on photovoltaic device performance. The diffusion profile is calculated using diffusion coefficients for sulfur in bulk CdTe [15]. It has been shown that this satisfactorily reproduces the diffusion profile measured in real devices [8], so that the simulations are relevant to current device fabrication methodologies.…”

Section: Manuscriptmentioning

confidence: 73%

“…525C isothermal sulfur diffusion profiles were calculated for 'annealing' times of 10, 100, 200, 300, 400 and 500 mins, using experimental diffusion coefficients for sulfur in bulk CdTe [15]. 525C/10 mins corresponds to the close space sublimation deposition conditions for CdTe in one of our labs (Liverpool).…”

Section: N V For Cdsmentioning

confidence: 99%

The effects of junction interdiffusion and misfit dislocations on the efficiency of highly mismatched heterojunction photovoltaic devices

Mendis

Treharne

Lane

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

show abstract

“…Indeed, if we take into account the maximum values of the diffusivity of sulfur in single crystal CdTe found by Lane et al [17], we obtain diffusion length of about 20 and 60 nm for sulfur in CdTe at 600 o C (30 s) and 650 o C (60 s), respectively [the use T G (time) values correspond to our deposition conditions]. In consideration of this result we conclude that spatially integrated experiments revealing intermixed layers as thick as several 100 nm or few µm are most probably strongly influenced by fast diffusion of sulfur within grain boundaries and extended defects [3,7].…”

Section: Inspection Of the Cds/cdte Interface Region At The Cleaved Edgementioning

confidence: 99%

Highly Efficient CdS/CdTe Solar Cells Investigated by Cathodoluminescence Spectroscopy

Jahn

Okamoto

Yamada

et al. 2001

SSP

View full text Add to dashboard Cite

Abstract:Thin film solar cells consisting of a glass/ITO/CVD-CdS/CSS-CdTe/ Cu:C/Ag layer system with conversion efficiencies up to 14.4% and (5-8) µm thick CdTe layers as well as CdS(90 nm)/CdTe(6 µm) layers deposited on Si have been investigated by cathodoluminescence (CL) spectroscopy at 5 K. The spectral position of the CdTe exciton line was used to probe the interface region between the n-type CdS layer and CdTe grains at a cleaved edge of the solar cell and neighboring grains at the top of uncovered CdTe layers. For substrate temperatures (T sub ) smaller than 610 o C during the CdTe deposition, the width of the intermixed region between the CdS layer and CdTe grains was found to be smaller than the lateral resolution of the CL (≈300 nm). For T sub as large as (630−650) o C, a decrease of the CdTe band gap appears to be present up to 0.6 µm from the CdS/CdTe interface. For the grain boundaries, however, a remarkable red shift of the exciton CL line is observed throughout the whole CdTe layer. A CdCl 2 treatment homogenizes the distribution of acceptor-like defects or impurities leading to an optimized p-conversion of the CdTe layer.CL spectra of the CdS window layer exhibit two broad bands centered at 1.72 (red) and 2.04 eV (yellow). Other authors found similar bands in CdS microcrystals and in single crystal CdS bombarded with electrons indicating that the yellow band can be assigned to Cd interstitials. In the solar cells, the yellow band is suppressed by the CdCl 2 treatment indicating a passivation or out-diffusion of Cd interstitials.

show abstract

Sulphur diffusion in CdTe and the phase diagram of the CdS–CdTe pseudo-binary alloy

Cited by 42 publications

References 6 publications

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

The effects of junction interdiffusion and misfit dislocations on the efficiency of highly mismatched heterojunction photovoltaic devices

Highly Efficient CdS/CdTe Solar Cells Investigated by Cathodoluminescence Spectroscopy

Contact Info

Product

Resources

About

Sulphur diffusion in CdTe and the phase diagram of the CdS–CdTe pseudo-binary alloy

Cited by 42 publications

References 6 publications

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

The effects of junction interdiffusion and misfit dislocations on the efficiency of highly mismatched heterojunction photovoltaic devices

Highly Efficient CdS/CdTe Solar Cells Investigated by Cathodoluminescence Spectroscopy

Contact Info

Product

Resources

About

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂and CdTe solar cells