Sulphur doped silicon light emitting diodes

Galata, S.; Lourenço, M. A.; Gwilliam, R.; Homewod, K.P.

doi:10.1016/j.mseb.2005.08.081

Cited by 5 publications

(6 citation statements)

References 34 publications

(43 reference statements)

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“…S impurities have been shown to provide both radiative and non-radiative recombination pathways, and thus we attribute the decreasing 0.99 eV luminescence with increasing S concentration to the associated non-radiative recombination pathways. 2,4 The general trends in the luminescence spectra of Si:S samples at 10 kV (BB-line, 0.99 eV band, and 0.85 eV band) are similar to those collected at 5 kV. The band centered at 0.85 eV appears in the 3 Â 10 15 cm À2 S-dose sample at 5 kV, increases in intensity as the dose is decreased further to 1 Â 10 15 cm…”

Section: à2supporting

confidence: 52%

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Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur

Fabbri

Smith

Recht

et al. 2013

Applied Physics Letters

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We investigate the luminescence of Si supersaturated with S (Si:S) using depth-resolved cathodoluminescence spectroscopy and secondary ion mass spectroscopy as the S concentration is varied over 2 orders of magnitude (10 18 -10 20 cm À3). In single-crystalline supersaturated Si:S, we identify strong luminescence from intra-gap states related to Si self-interstitials and a S-related luminescence at 0.85 eV, both of which show a strong dependence on S concentration in the supersaturated regime. Sufficiently high S concentrations in Si (>10 20 cm À3) result in complete luminescence quenching, which we propose is a consequence of the overlapping of the defect band and conduction band.

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Section: à2supporting

confidence: 52%

“…At equilibrium concentrations 1 (10 16 -10 17 cm À3 ), Si doped with S (Si:S) offers a potential route to high-efficiency Si-based light emission 2,3 due to metastable, optically active S-complexes. [4][5][6] In a different regime of doping, Si doped with S to beyond-equilibrium concentrations (10 18 -10 20 cm…”

mentioning

confidence: 99%

Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur

Fabbri

Smith

Recht

et al. 2013

Applied Physics Letters

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“…More details on preparation of samples can be found somewhere else (see, e.g., Refs. [17][18][19][20]). Three groups of samples denoted by A1-A4, B1-B4, and C1-C4 have been studied (Table I).…”

Section: Methodsmentioning

confidence: 99%

“…[21][22][23]), however, no room temperature luminescence has been found. After the dislocation engineered Si light emitting diode was first fabricated [3] effect of additional doping with sulphur impurities was also studied [20]. Below we study effect of UST on electrical properties of the sulphur doped dislocation engineered Si.…”

Section: Methodsmentioning

confidence: 99%

A study of electrical properties of dislocation engineered Si processed by ultrasound

Davletova¹,

Karazhanov

2009

Journal of Physics and Chemistry of Solids

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This work presents experimental study of electrical properties of dislocation engineered Si p-n junction before and after influence of ultrasound waves. We have studied current-voltage characteristics in the dark and upon illumination for forward and reverse biases before and after ultrasound processing. By fitting the theoretically established currentvoltage dependence to the experimentally measured ones the diode ideality factor and saturation current have been estimated. It is found that current transport through the dislocation-engineered Si p-n junction can be controlled by generation-recombination or tunneling recombination mechanisms. Ultrasound is found to modulate electrical properties of the dislocation engineered Si.

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“…[7][8][9][10][11] However, there were no new improved experimental results on highefficiency luminescence from sulfur-related isoelectronic centers in silicon for nearly two decades, until the dislocation loop was introduced to improve the luminescence of sulfurimplanted silicon by Homewood and co-workers in 2005. 12,13 It is difficult to perform moderate annealing for the formation of Ohmic contacts in devices without destroying the luminescence capability because the luminescence of the quenched samples will, in general, be completely quenched after annealing at temperatures higher than 200°C. Due to the high luminescence efficiency from sulfur-doped silicon, the capability of electrical excitation with low voltage, and the full compatibility with modern microelectronic technology, it would be worthwhile to pay more attention to the problem of how to increase the light emission efficiency and to achieve room temperature luminescence from sulfurdoped silicon.…”

mentioning

confidence: 99%

Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

Zhang

Wang

Cheng

et al. 2007

Applied Physics Letters

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Enhanced near-infrared photoluminescence ͑PL͒ from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted. The PL from the sulfur and copper coimplanted silicon peaked between 70 and 100 K and persisted to 260 K. This result strongly supports the original conjecture from the optical detection of magnetic resonance studies that the strong PL from sulfur-doped silicon comes from S- Since Brown and Hall's inaugurating work on strong near-infrared light emission from sulfur-doped silicon in 1986, 1,2 much work has been devoted to achieving highefficiency light emission from isoelectronic complexes in chalcogen-doped silicon [3][4][5][6] and to characterizing the relevant atomic structure of the isoelectronic luminescent centers with the optical detection of magnetic resonance ͑ODMR͒ studies and other electronic spin resonance techniques.7-11 However, there were no new improved experimental results on highefficiency luminescence from sulfur-related isoelectronic centers in silicon for nearly two decades, until the dislocation loop was introduced to improve the luminescence of sulfurimplanted silicon by Homewood and co-workers in 2005.12,13 It is difficult to perform moderate annealing for the formation of Ohmic contacts in devices without destroying the luminescence capability because the luminescence of the quenched samples will, in general, be completely quenched after annealing at temperatures higher than 200°C. Due to the high luminescence efficiency from sulfur-doped silicon, the capability of electrical excitation with low voltage, and the full compatibility with modern microelectronic technology, it would be worthwhile to pay more attention to the problem of how to increase the light emission efficiency and to achieve room temperature luminescence from sulfurdoped silicon. However, present research on silicon-based luminescence has centered mostly on silicon nanocrystals and rare earth ions.14 It is very important to know the exact composition of the luminescent isoelectronic complexes if more efficient luminescence is to be obtained from the isoelectronic pairs. A conjecture has been proposed from ODMR studies that the luminescent isoelectronic complexes from sulfur-doped silicon involve an atom with nuclear spin I =3/2. This impurity atom was assumed to be copper.7-11 Surprisingly, no intentional doping with copper atoms has been employed to see if copper codoping can increase luminescence from sulfurdoped silicon. In this work, we have achieved strongly enhanced light emission from rapid thermally quenched sulfurdoped silicon into which additional copper or silver ions were coimplanted. The photoluminescence ͑PL͒ from sulfur and copper coimplanted silicon persists to 260 K. It is believed that the complexes between chalcogen elements and group IB elements in silicon can constitute strong luminescent isoelectronic centers in silicon.The samples were prepared by ion implantation of...

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Sulphur doped silicon light emitting diodes

Cited by 5 publications

References 34 publications

Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur

Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur

A study of electrical properties of dislocation engineered Si processed by ultrasound

Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

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