Summary of HgCdTe 2D array technology in the U.K.

Baker, Ian; Maxey, C. D.

doi:10.1007/bf02665856

Cited by 79 publications

(52 citation statements)

References 32 publications

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“…The profile of the R 0 A versus 1000/T curve in Figure 8 establishes that the details of modeled values to be reported elsewhere indicate that the dark current is dominated by four different mechanisms in four different temperature regimes. From 50 to 100 K, the device per formance is limited by the temperature-insensitive barriers tunneling effect [32] that causes the device performance not to be good more than 100 K, the thermally generated carriers produce a stronger generation-recombination and diffusion current. From 100 to 125 K, the device is limited by the generation-recombination with an interesting recombination lifetime in the depleted region while above 125 K, the diffusion current becomes the dominant component.…”

Section: Resultsmentioning

confidence: 99%

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Sfina¹,

Yahyaoui²,

Saïd³

et al. 2014

MNSMS

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stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 -1.55 μm. The electron transport in the Si/Si 1−x Ge x /Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrödinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (R 0 A) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.

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Section: Resultsmentioning

confidence: 99%

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Sfina¹,

Yahyaoui²,

Saïd³

et al. 2014

MNSMS

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“…For example, MCT diodes can have a significant shunt current path provided by conducting dislocations [47,48] and both InAs and InN thin films are typically grown on substrates for which there is a large lattice mismatch, leading to the formation of high dislocation densities.…”

Section: Baars Et Al Use a Parallel Conduction Model In Which The Obmentioning

confidence: 99%

Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a "window" from ca. 3 × 10 17 to 1 × 10 19 cm −3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coefficient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ∼70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge. * Corresponding author: JWAger@lbl.gov

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“…The process is known to inject mercury interstitials in MCT, which fill the existing metal vacancies and strongly interact with other point and extended defects [9][10][11]. By studying properties of MCT before and after the milling, as well as during ageing of the material, when newly formed defects gradually decompose, one gets much more information about the defects, com− pared with the standard measurements.…”

Section: Methodsmentioning

confidence: 99%

Electrical properties of HgCdTe films grown by MOCVD and doped with as

Іжнін¹,

Savytskyy²,

Fitsych

et al. 2013

Opto-Electronics Review

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Electrical properties of HgCdTe films grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates and doped with the As acceptor during the growth were studied. Discrete mobility spectrum analysis was used to extract the parameters of the as-grown films and films after ion milling and during prolonged relaxation of milling-induced defects. The measurements revealed significant compensation of the as-grown MOCVD HgCdTe with As on Te sites being the main defect, residual donor concentration of the order of (2–5)×1015 cm−3, and the presence of some unidentified defects.

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Summary of HgCdTe 2D array technology in the U.K.

Cited by 79 publications

References 32 publications

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Hole transport and photoluminescence in Mg-doped InN

Electrical properties of HgCdTe films grown by MOCVD and doped with as

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