Summary of Schottky barrier height data on epitaxially grown n- and p-GaAs

Myburg, G.; Auret, F.D.; Meyer, W.E.; Louw, C.W.; Staden, M.J. van

doi:10.1016/s0040-6090(98)00428-3

Cited by 45 publications

(25 citation statements)

References 13 publications

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“…7 Results for ⌽ B IV for diodes prepared on in situ UHV cleaved ͑011͒ substrates are also within this range 20 ͑0.85 eV͒ as are electrodeposited contacts 19 ͑0.72-0.82 eV͒ including our own result for ͑GaAs͒ ͑111͒B, 0.77 eV. Values for ⌽ B IV are between 0.73 and 0.89 eV.…”

Section: Introductionsupporting

confidence: 56%

Epitaxial Bi∕GaAs diodes via electrodeposition

Bao¹,

Kavanagh²

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Epitaxial Bi/ GaAs diodes have been formed by electrodeposition from bismuth nitrate and ammonium sulfate ͑͑NH 4 ͒ 2 SO 4 ͒ aqueous solutions. Bi grows ͑0001͒ oriented on both GaAs ͑111͒B and ͑001͒ substrates while it tilts 16°to a ͑011 គ 8͒ surface orientation for ͑011͒ GaAs. The metal orients in all cases with its ͕112 គ 0͖ planes parallel the GaAs ͕110͖ planes. Diodes prepared on ͑001͒, ͑111͒B, and ͑011͒ wafers have current-voltage barrier heights ⌽ B IV that vary from 0.74, to 0.76, to 0.83 eV ͑n = 1.01-1.11͒, respectively. These barrier heights straggle values from earlier reports for polycrystalline Bi deposited by ultrahigh vacuum techniques or electrodeposition. Barrier heights measured from high frequency, capacitance-voltage characteristics are higher than the ⌽ B IV results, 0.06-1.5 eV, as a function of the GaAs orientation, increasing in value in order of ͑011͒, ͑001͒, to ͑111͒B. This is explained by a combination of image force lowering and field emission corrections, and interface state/dipoles that are likely dependent on the GaAs orientation and on the degree of ͑0001͒ Bi alignment. These results are supported by cross-sectional transmission electron microscopy investigations indicating abrupt Bi/ GaAs interfaces without evidence of a significant interfacial oxide or reacted layer.

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Section: Introductionsupporting

confidence: 56%

Epitaxial Bi∕GaAs diodes via electrodeposition

Bao¹,

Kavanagh²

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…2a shows the temperature dependence of the reverse current at bias V = 1.0 V. The activation energy estimated from this dependence in the high-temperature region is equal to E a = 0.69 ± 0.02 and E a = 0.58 ± 0.02 eV for Cr/nGaAs and Ag/p-GaAs, respectively. These values are very close to the barrier heights values at the Cr/GaAs and Ag/GaAs interfaces, which are in reasonable agreement with the data of [7,8]. This is an evidence of the predominant contribution of the thermionic emission mechanism to dark current flow at high-temperature region.…”

Section: Resultssupporting

confidence: 90%

Determination of the parameters for the back-to-back switched Schottky barrier structures

Ahmetoglu

Akay

2010

Current Applied Physics

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“…5(c)) tend to the value of 0.892 V, which, as already mentioned, practically corresponds to the value obtained for contacts formed by the electron-beam evaporation of iridium (0.90 V). 17,18 But at the same time, there is a deviation from the calculated curve, which is the greater, the smaller the contact diameter: the dependence u b ðVÞ drops with decreasing diameter, instead of fitting the unified calculated curve (solid line), as in Ref. 12.…”

Section: Resultsmentioning

confidence: 99%