<sup>60</sup>
                    Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Wang, Yanping; Luo, Yi; Wang, Wei; Zhang, Keying; Guo, Hao; Guo, Xiaoqiang; Wang, Yuanming

doi:10.1088/1674-1137/37/5/056201

Chinese Phys. C

2013

DOI: 10.1088/1674-1137/37/5/056201

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⁶⁰ Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Yanping Wang¹,

Yi Luo²,

Wei Wang³

et al.

Abstract: The testing techniques and experimental methods of the 60Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at differe… Show more

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Cited by 2 publications

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Evidence of dynamic-R _on degradation on low-dose ⁶⁰Co gamma radiation AlGaN/GaN HEMTs

Martínez¹,

Maset²,

Gilabert³

et al. 2018

Semicond. Sci. Technol.

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Wide band gap semiconductors are expected to be the future technology for power semiconductors that can enable the reduction of power consumption in many applications. But, in order to use these materials, it is necessary to study their reliability. Regarding its possible use in radioactive environments, it is essential to know the response of HEMT structures based on GaN under radiation. This paper is focused on the study of the effects of gamma radiation on dynamic performance of commercial GaN HEMTs. A test campaign was performed to detect variations on dynamic on-resistance induced by irradiation, due to the relevance of dynamic resistance behavior in power switching converters. This study demonstrates an increase of the dynamic resistance in MISHEMTs structures when they are under gamma radiation together with a voltage stress in the drain region. This increase takes place especially after a hardswitching transition due to the hot-electron effect that takes place during the switching events and can not only lead to an increase of the power losses, but also a reduction in the life time of the device due to the permanent degradation that could be induced by the hot-electron effect.

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Evidence of dynamic-R _on degradation on low-dose ⁶⁰Co gamma radiation AlGaN/GaN HEMTs

Martínez¹,

Maset²,

Gilabert³

et al. 2018

Semicond. Sci. Technol.

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show abstract

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 1012 n/cm2 and 3 × 1012 n/cm2 exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

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⁶⁰ Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Cited by 2 publications

References 18 publications

Evidence of dynamic-R _on degradation on low-dose ⁶⁰Co gamma radiation AlGaN/GaN HEMTs

Evidence of dynamic-R _on degradation on low-dose ⁶⁰Co gamma radiation AlGaN/GaN HEMTs

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

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60 Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Cited by 2 publications

References 18 publications

Evidence of dynamic-R on degradation on low-dose 60Co gamma radiation AlGaN/GaN HEMTs

Evidence of dynamic-R on degradation on low-dose 60Co gamma radiation AlGaN/GaN HEMTs

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Contact Info

Product

Resources

About

⁶⁰ Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Evidence of dynamic-R _on degradation on low-dose ⁶⁰Co gamma radiation AlGaN/GaN HEMTs

Evidence of dynamic-R _on degradation on low-dose ⁶⁰Co gamma radiation AlGaN/GaN HEMTs