Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator

Lourenço, M. A.; Milošević, Milan; Gorin, Arnaud; Gwilliam, R.; Homewood, K. P.

doi:10.1038/srep37501

Cited by 20 publications

(22 citation statements)

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“…Erbium ions (Er 3+ ) have radiative emissions near 1.54 µm, which is in the telecommunication wavelength band for long‐haul optic fibers. [ 5–8 ] Thus, doping silicon with Er 3+ luminescence centers is considered a promising approach [ 8–10 ] among others [ 11–16 ] to produce silicon‐based light sources. Due to their relatively low solubility (≈5 × 10 17 cm −3 ) in silicon, Er (with O) impurities are often incorporated into silicon via nonequilibrium ion implantation.…”

Section: Figurementioning

confidence: 99%

“…Due to their relatively low solubility (≈5 × 10 17 cm −3 ) in silicon, Er (with O) impurities are often incorporated into silicon via nonequilibrium ion implantation. [ 5–10 ] Notably, ion implantation will cause severe lattice damage, which is detrimental to high‐performance electronic devices. Rapid thermal annealing (RTA) is widely employed to repair damaged lattices.…”

Section: Figurementioning

confidence: 99%

“…However, during the standard RTA treatment, large Er 2 O 3 /ErSi 1.7 or similar composites precipitate out of silicon as the Er/O co‐doped silicon substrate slowly cools, generating a high concentration of defects due to the lattice mismatch between the silicon lattice and the precipitates; these defects act as efficient nonradiative recombination centers. [ 5–10,17,18 ] Consequently, the emission from Er/O co‐doped crystalline silicon is extremely weak at room temperature. [ 5–10,17,18 ] In the 1990s, solid phase epitaxy was employed to treat Er/O co‐doped Si samples via thermal annealing at 550 °C for several hours.…”

Section: Figurementioning

confidence: 99%

“…[ 5–10,17,18 ] Consequently, the emission from Er/O co‐doped crystalline silicon is extremely weak at room temperature. [ 5–10,17,18 ] In the 1990s, solid phase epitaxy was employed to treat Er/O co‐doped Si samples via thermal annealing at 550 °C for several hours. [ 19–21 ] In this process, the silicon amorphized via ion implantation could be recrystallized as defects migrated from the bulk to surfaces.…”

Section: Figurementioning

confidence: 99%

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Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

Wen

Hong

et al. 2020

Advanced Optical Materials

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A silicon light source at the communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium and oxygen ions is considered one of the most promising approaches to produce silicon light sources. However, this method suffers from a high concentration of defects in the form of nonradiative recombination centers at the interface between the crystalline silicon and large Er2O3/ErSi1.7 precipitates during the standard rapid thermal treatment. Here, a deep cooling process is applied to suppress the growth of these precipitates by flushing the high‐temperature Er/O‐doped silicon substrates with helium gas cooled in liquid nitrogen. The resultant light‐emitting efficiency at room temperature is enhanced by two orders of magnitude in comparison with that of the sample treated via standard rapid thermal annealing. The deep‐cooling‐processed Si samples are further processed into light‐emitting diodes. Bright electroluminescence with a main spectral peak at 1536 nm is also observed from the silicon‐based diodes with the external quantum efficiency reaching ≈0.8% at room temperature. Based on these results, the development of electrically driven silicon optical amplifiers or even lasers at communication wavelengths is promising for monolithically integrated silicon photonics.

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Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

Wen

Hong

et al. 2020

Advanced Optical Materials

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“…Помимо этого, современный научный интерес акцентирован на легированном Er пористом кремнии [18], структурах с нанокристаллическим кремнием [19], в диэлектрических матрицах [20][21][22] и структурах на основе прямозонных полупроводников, легированных Er [23,24]. Тем не менее продолжаются поиски путей оптимизации соотношения Er и O в комплексе Er : O x в кремнии [25,26]. Кроме того, рассматривается усиление ФЛ Er в Si за счет плазмонных эффектов на наночастицах металлов [27].…”

Section: Introductionunclassified

Перераспределение атомов отдачи эрбия и кислорода и структура тонких приповерхностных слоев кремния, созданных высокодозной имплантацией аргона через поверхностные пленки Er и SiO-=SUB=-2-=/SUB=-

Феклистов¹,

Черков²,

Попов³

et al. 2018

Журнал Технической Физики

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С использованием аналитической высокоразрешающей электронной микроскопии исследована структура Si и перераспределение aтомов отдачи Er и O в тонких (∼ 10 нм) приповерхностных слоях, внедренных с помощью имплантации Ar + с энергией 250−290 кэВ и дозой 1 • 10 16 см −2 через пленки соответственно Er и SiO 2 и последующего отжига. Установлено, что рекристаллизация Si срывается на расстоянии ∼ 20 нм от поверхности, где достигается критическое для срыва значение концентрации эрбия 5 • 10 19 см −3 при T = 950 • С. Это опровергает общепринятую модель переноса атомов Er фронтом рекристаллизации в SiO 2 на поверхности. Вместо этого показано, что перераспределение атомов отдачи O к исходному оксиду во время отжига при неподвижных атомах Er обеспечивает формирование поверхностно неоднородных фаз эрбия таким образом, что обогащенная кислородом фаза Er−Si−O оказывается сосредоточенной в оксиде, а обедненная фаза Er−Si остается в Si. Это объясняет частичную потерю внедренного Er после снятия оксида вместе с Er−Si−O фазой. Показано, что нетипичное для рекристаллизации (100)−Si образование большой плотности микродвойников (локально до 10 13 см −2) связано с образованием пузырей и кластеров Ar.

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Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Zhao

Lin

Gao

et al. 2021

Adv Materials Technologies

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However, the spectral responses of silicon photodiodes are limited to wavelengths shorter than 1.1 µm, significantly shorter than communication wavelengths (≈1.55 µm). Approaches have been explored to extend the spectral range of silicon-based photodetectors to communication wavelengths. One involves incorporating chalcogen dopants into Si through picosecond or femtosecond laser irradiation. [19][20][21][22] Although the room temperature responsivity of 35 mA W −1 at 1550 nm was achieved using this process, it is not suitable for the integrated circuit application due to the complicated laser annealing process and the noncrystalline Si surface formed in the process. [20,23] Recently, pulsed laser treatment using nanosecond laser has been reported to form singlecrystalline surface on gold ion doped silicon. The resultant Si:Au photodiodes have the maximum room temperature EQE of 9.3 × 10 −5 at communication wavelengths. [24] Nevertheless, Au is an important detrimental elements to silicon-based devices and therefore incompatible with the CMOS process. [25,26] Although silicon hyper doped with silver was made into photodiodes, [27] doping silicon with erbium (often with oxygen) [28][29][30] is particularly interesting for photodetection since Er/O doped silicon can be also potentially made into silicon light sources at communication wavelength. [31][32][33][34][35] Traditionally, Er/O doped silicon suffers from Er/O precipitation after standard rapid thermal annealing (RTA), which results in strong nonradiative recombination. [36][37][38] Consequently, the RTA-treated Er/O silicon cannot emit or detect photons at communication wavelengths efficiently at room temperature. [28,36] Recently, we employed a deep cooling (DC) process to treat the Er/O implanted silicon. [31] The processed samples exhibit a strong photoluminescence at room temperature, two orders of magnitude higher than the samples treated by standard RTA process. In this work, we explore the possibility to use Er/O doped silicon treated by the DC process for high-performance photodetection at communication wavelengths. The samples were first annealed at high-temperature (≈950 °C) and cooled Wide band infrared photodetectors have found a wide range of applications in sensing, communication, and spectral analysis. However, the commonly used infrared photodetectors are based on Ge and III-V semiconductors which are not complementary metal-oxide-semiconductor (CMOS) compatible and therefore have limited applications. There is a huge demand for silicon-based infrared photodetectors due to its low-cost and compatibility with CMOS processes. Nevertheless, the spectral bandwidth of Si photodetectors is limited to wavelengths below 1.1 µm. Several approaches are developed to extend Si photodetection bandwidth to communication wavelengths. Er/O doped Si is a promising approach which, however, suffers from low infrared responsivities at room temperature when the samples are treated with the standard rapid thermal annealing (RTA). In this work, a novel deep cooling...

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Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator

Cited by 20 publications

References 59 publications

Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

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