Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching 2010
DOI: 10.1364/ps.2010.pwd2
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Super-Long Cavity, Monolithically Integrated 1-GHz Hybrid Mode-Locked InP Laser for All-Optical Sampling

Abstract: A 1-GHz hybrid mode-locked monolithic semiconductor laser on an InP platform is demonstrated. Monolithic integration of the 4.1 cm cavity mode-locked laser with active quantum well and passive waveguide can be achieved with 400 nm wide and 3μm deeply etched mirrors.

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“…Some of the design advantages of this technology, over fabricating these lasers on indium phosphide, are as follows. First, the waveguide losses are lower by about a factor of ten, which makes long on-chip cavities possible [4], [5]. Second, two-photon absorption is around two orders of magnitude lower in silicon [6].…”
Section: Introductionmentioning
confidence: 99%
“…Some of the design advantages of this technology, over fabricating these lasers on indium phosphide, are as follows. First, the waveguide losses are lower by about a factor of ten, which makes long on-chip cavities possible [4], [5]. Second, two-photon absorption is around two orders of magnitude lower in silicon [6].…”
Section: Introductionmentioning
confidence: 99%