Superconducting-Ferromagnetic Transistor

Nevirkovets, I. P.; Chernyashevskyy, O.; Prokopenko, G.I.; Mukhanov, Oleg A.; Ketterson, J. B.

doi:10.1109/tasc.2014.2318317

Cited by 35 publications

(21 citation statements)

References 31 publications

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“…However, such a RAM has a major scalability problem 6 . Recently, several proposals have been made aiming to employ hybrid superconductor/ferromagnet (S/F) structures in RAM 8 9 10 11 12 . In this case the information is stored in magnetic layers, as in magnetic random access memory (MRAM) 13 .…”

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confidence: 99%

Single Abrikosov vortices as quantized information bits

2015

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Superconducting digital devices can be advantageously used in future supercomputers because they can greatly reduce the dissipation power and increase the speed of operation. Non-volatile quantized states are ideal for the realization of classical Boolean logics. A quantized Abrikosov vortex represents the most compact magnetic object in superconductors, which can be utilized for creation of high-density digital cryoelectronics. In this work we provide a proof of concept for Abrikosov-vortex-based random access memory cell, in which a single vortex is used as an information bit. We demonstrate high-endurance write operation and two different ways of read-out using a spin valve or a Josephson junction. These memory cells are characterized by an infinite magnetoresistance between 0 and 1 states, a short access time, a scalability to nm sizes and an extremely low write energy. Non-volatility and perfect reproducibility are inherent for such a device due to the quantized nature of the vortex.

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confidence: 99%

Single Abrikosov vortices as quantized information bits

2015

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“…11 Initial experiments on Josephson junctions with spin valves as weak links based on the tunneling magnetoresistance (TMR) were made based on Nb and Ni. 12 The TMR is the result of spin-dependent tunneling through an insulating barrier (I) of FIF structure and depends on mutual magnetization orientation of the ferromagnetic electrodes. 13,14 In contrast if the F-layers are magnetized parallel the majority/minority spins tunnel into the same majority and minority bands on the other side of tunnel junction.…”

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confidence: 99%

Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions

et al. 2017

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We demonstrate an integration of tunneling magnetoresistance and the Josephson effects within one tunneling junction. Several sets of Nb-Fe-Al-Al2O3-Fe-Nb wafers with varying Al and Fe layers thickness were prepared to systematically explore the competition of TMR and Josephson effects. A coexistence of the critical current IC(dFe) and the tunneling magnetoresistance ratio T M R(dFe) is observed for iron layer dFe thickness range 1.9 and 2.9 nm. Further optimization such as thinner Al2O3 layer leads to an enhancement of the critical current and thus to an extension of the coexistence regime up to dFe≃3.9 nm Fe.

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“…This is considered to be the "main obstacle to the realization of high performance computer systems and signal processors based on superconducting electronics" [9]. Several new concepts for scalable, nanometersized superconducting RAM, involving hybrid S/F structures, were proposed recently [10][11][12][13][14][15][16]. The nonvolatile memory function in ferromagnets is naturally provided by the finite coercive field for the remagnetization of the ferromagnetic particle, and the information is stored in the orientation of the magnetization.…”

Section: Introductionmentioning

confidence: 99%

Memory-functionality superconductor/ferromagnet/superconductor junctions based on the high- Tc cuprate superconductors YBa2Cu3O7
Prada
¹
,
Golod
²
,
Kapran
³

et al. 2019
Phys. Rev. B
8
0
4
0
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Complex oxides exhibit a variety of unusual physical properties, which can be used for designing novel electronic devices. Here we fabricate and study experimentally nanoscale superconductor/ferromagnet/ superconductor junctions with the high-T c cuprate superconductors YBa 2 Cu 3 O 7−x and the colossal magnetoresistive (CMR) manganite ferromagnets La 2/3 X 1/3 MnO 3+δ (X =Ca or Sr). We demonstrate that in a broad temperature range the magnetization of a manganite nanoparticle, forming the junction interface, switches abruptly in a monodomain manner. The CMR phenomenon translates the magnetization loop into a hysteretic magnetoresistance loop. The latter facilitates a memory functionality of such a junction with just a single CMR ferromagnetic layer. The orientation of the magnetization (stored information) can be read out by simply measuring the junction resistance in a finite magnetic field. The CMR facilitates a large readout signal in a small applied field. We argue that such a simple single-layer CMR junction can operate as a memory cell both in the superconducting state at cryogenic temperatures and in the normal state up to room temperature.

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Superconducting-Ferromagnetic Transistor

Cited by 35 publications

References 31 publications

Single Abrikosov vortices as quantized information bits

Single Abrikosov vortices as quantized information bits

Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions

Memory-functionality superconductor/ferromagnet/superconductor junctions based on the high- Tc cuprate superconductors YBa2Cu3O7
Prada
¹
,
Golod
²
,
Kapran
³

et al. 2019
Phys. Rev. B
8
0
4
0
View full text Add to dashboard Cite

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Superconducting-Ferromagnetic Transistor

Cited by 35 publications

References 31 publications

Single Abrikosov vortices as quantized information bits

Single Abrikosov vortices as quantized information bits

Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions

Memory-functionality superconductor/ferromagnet/superconductor junctions based on the high- Tc cuprate superconductors YBa2Cu3O7Prada1, Golod2, Kapran3 et al. 2019Phys. Rev. B8040View full textAdd to dashboardCite

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Memory-functionality superconductor/ferromagnet/superconductor junctions based on the high- Tc cuprate superconductors YBa2Cu3O7
Prada
¹
,
Golod
²
,
Kapran
³

et al. 2019
Phys. Rev. B
8
0
4
0
View full text Add to dashboard Cite