Superconducting nanobridges prepared by a self-limiting wet chemical etching process

Kamm, Frank-Michael; Plettl, Alfred; Ziemann, P.

doi:10.1088/0953-2048/11/12/008

Cited by 7 publications

(2 citation statements)

References 12 publications

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“…The YBa 2 Cu 3 O 7Àx , thin ®lm was patterned by wet chemical etching [11] using a resist mask de®ned by conventional photolithography. The step formation in the substrate of the 270 nm deep trench was performed by an ion beam etching procedure using a resist mask de®ned by photolithography.…”

Section: Hts-squid Preparation and Characterizationmentioning

confidence: 99%

Superconducting and electro-optical thin films prepared by pulsed laser deposition technique

Schubert

Siegert

Fardmanesh

et al. 2000

Applied Surface Science

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The pulsed laser deposition (PLD) technique is an excellent method to prepare single crystalline complex oxide thin ®lms. We have successfully grown ®lms for the use in HTS SQUID-devices as well as for thin ®lm optical waveguides. The Josephson junction used in the HTS SQUIDs is formed by a step edge type grain boundary junction. The step preparation is a very critical process in the SQUID preparation to achieve reproducible low 1/f noise devices. We have established a new ion beam etching process to achieve clean and steep edges in LaAlO 3 (1 0 0) substrates. The 1/f noise of SQUIDs prepared with the new method is drastically reduced. In the process of developing thin ®lm electro-optical waveguide modulators we investigated the in¯uence of different substrates on the optical and structural properties of epitaxial BaTiO 3 thin ®lms. These ®lms are grown on MgO(1 0 0), MgAl 2 O 4 (1 0 0), SrTiO 3 (1 0 0) and MgO buffered Al 2 O 3 (1 1 0 2) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The dielectric constant, the ferroelectric hysteresis loop and the transition temperature (ferroelectric to paraelectric state) of the BaTiO 3 thin ®lms are measured. #

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Section: Hts-squid Preparation and Characterizationmentioning

confidence: 99%

Superconducting and electro-optical thin films prepared by pulsed laser deposition technique

Schubert

Siegert

Fardmanesh

et al. 2000

Applied Surface Science

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“…Electron beam lithography (EBL) has been widely used for the fabrication of HTS devices with ultrasmall critical dimensions [3][4][5][6][7][8]. The main advantages of e-beam lithography are the high resolution (limited from the electron beam dispersion in the irradiated resist) [9] and the process flexibility.…”

Section: Introductionmentioning

confidence: 99%

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Olzierski

Vutova

Mladenov

et al. 2004

Supercond. Sci. Technol.

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High temperature superconducting (HTS) devices offer significant performance (higher signal to noise ratio, sensitivity etc) improvement over conventional devices, becoming more prominent when device dimensions are scaled down. A typical technology for the fabrication of devices with very small critical dimensions is electron beam lithography. In the current work, a detailed study of the electron beam lithography process is presented using two simulation methods: one based on Monte Carlo simulation and one based on the Boltzmann transport equation. Simulation energy deposition results are compared with experimental ones in the case of Si and superconducting substrates for the first time, with satisfactory agreement found. The experimental data for statistical distributions of the scattered electrons were calculated in the case of an epoxy based chemically amplified resist film deposited on Si and on Y Ba2Cu3O7−δ/SrTiO3. The substrate strongly influences the distribution of the backscattered electrons due to the different effective atomic number and the mass densities of the substrate and YBCO layer are studied. It is shown that the decrease of the effective atomic numbers of the substrates (MgO and SrTiO3 in comparison with YBCO) leads to an increase in the external proximity effect obtained in regions far from the point of beam incidence on the resist (2 µm for 25 keV and 10–11 µm for 75 keV in the case of MgO). On MgO and SrTiO3 substrates the proximity effect is lower than on YBCO substrate (bulk YBCO) in regions near to the point of beam incidence. Using simulation tools, accurate prediction of final resist profiles (after development) over a wide exposure dose range of dense sub-quarter-micron structures is performed for both Si and superconducting substrates.

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Matching in YBCO nanobridges due to surface barrier effects

Eisenmenger

Kamm

Plettl

et al. 2004

Physica C: Superconductivity and its Applications

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Superconducting nanobridges prepared by a self-limiting wet chemical etching process

Cited by 7 publications

References 12 publications

Superconducting and electro-optical thin films prepared by pulsed laser deposition technique

Superconducting and electro-optical thin films prepared by pulsed laser deposition technique

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Matching in YBCO nanobridges due to surface barrier effects

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