Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing

Daubriac, Richard; Acosta-Alba, P.; Marcenat, C.; Lequien, S.; Vethaak, Tom Doekle; Nemouchi, F.; Lefloch, F.; Kerdilès, S.

doi:10.1149/2162-8777/abdc41

Cited by 10 publications

(6 citation statements)

References 25 publications

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“…In these cases, the concentration of active dopants can reach atomic percentages as high as 5–10%, exceeding the crystal solubility limit. Ultradoping involves utilizing high doping concentrations to achieve superconductivity, whereas hyper-doping is linked to augmenting semiconductor bands to increase absorption coefficients and enhance plasmonic effects in the infrared region. − A successful completion of laser melting processes requires an in-depth design of experiments, often coupled to precise calculations. To this purpose, having an exhaustive comprehension of crystalline and liquid optical functions is essential.…”

Section: Introductionmentioning

confidence: 99%

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Ricciarelli,

Deretzis,

Calogero

et al. 2024

J. Phys. Chem. C

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The properties of liquid Si−Ge binary systems under melting conditions deviate from those expected by the ideal alloy approximation. Particularly, a nonlinear dependence of the dielectric functions occurs with the reflectivity of liquid Si−Ge reaching a maximum at 50% Ge content, which is 10% higher than in pure Si or Ge. Using ab initio methodologies, we modeled liquefied Si−Ge alloys, unveiling very high coordination numbers and poor symmetry in the first coordination shell with respect to Si and Ge, related to different bonding properties. We simulated optical functions, quantitatively replicating the aforementioned reflectivity trend, and we highlighted a direct relationship between atomic structure and optical properties, indicating that unusual optics arises from Si−Ge higher local coordination characterized by low symmetry. We forecast further implications for the overall class of these alloys. These findings expand our comprehension of liquefied semiconductors and are essential for implementing controlled laser melting procedures to highly dope these materials for advanced transistors, superconductors, sensors, and plasmonic devices.

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Section: Introductionmentioning

confidence: 99%

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Ricciarelli,

Deretzis,

Calogero

et al. 2024

J. Phys. Chem. C

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“…In the context of group IV elemental and compound semiconductor processing, pulsed-LA applications are ubiquitous. ,, These include the fabrication of poly-Si thin-film transistors, − ultrashallow device junctions, ,− efficient contacts by silicidation, explosive crystallization, − strain, defect, , and dopant engineering. − Localized heating minimizes the risk of damaging sequentially integrated components of monolithic three-dimensional (3D) devices. − In optoelectronics, pulsed-LA is a key process for fabricating poly-Si displays, − thin metal-oxides, pure-carbon electrodes for touch screens or solar cells, and hyper-doped semiconductors for near-infrared photodetectors . It also allows strain, composition and morphology engineering of fiber-based photonic devices, and fabrication of heavily doped superconducting silicon for monolithic quantum device integration. ,− Despite all of these applications, understanding the ultrafast nonequilibrium kinetics of the liquid/solid interface in early stages of the process and correlating it to the postirradiation morphology and properties is challenging. This is because any experimental characterization, no matter how accurate, can only access the final state of the system.…”

Section: Introductionmentioning

confidence: 99%

Atomistic Insights into Ultrafast SiGe Nanoprocessing

Calogero,

Raciti,

Ricciarelli

et al. 2023

J. Phys. Chem. C

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Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this but requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework that can simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale superlattice kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology, and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations as well as advanced applications to strained, defected, nanostructured, and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

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“…In previous studies, it was shown that the electrically active carrier concentration in binary Si:P could be significantly increased by nanosecond laser annealing thanks to its ability to dissolve P clusters [5]. In binary Si:B, superconductivity was achieved by electrically activating ultra-high B concentrations [6]. In-situ doping Ge with B resulted in binary alloys [7] with metastable, ultra-high substitutional concentrations.…”

Section: Introductionmentioning

confidence: 99%

Nanosecond Laser Annealing of In-Situ Boron-Doped Ge Layers for Dopant Activation

Frauenrath¹,

Alba²,

Papon³

et al. 2022

ECS Trans.

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Low contact resistances are required to continue the miniaturization of CMOS devices and improve the performances of group IV semiconductors’ photodiodes and light emitting devices. In this study, we tried to enhance the electrical activation in in-situ boron-doped germanium by nanosecond laser annealing (NLA), an ultrafast, non-equilibrium process. Similar annealing regimes than that evidenced on SiGe thin layers were seen. Surface structures with shapes and orientations comparable to that after SiGe NLA were found in the surface melt regime. When the entire Ge:B layer was melted, we obtained a flat surface with a root mean square roughness of 1.51 nm. Laser annealing resulted in a redistribution of B, with the formation of electrically inactive clusters that did not contribute to strain. Accordingly, the sheet resistance increased by 70%, from 39.82 Ω/□ up to 68.62 Ω/□, when the layer was melted. This corresponded to an electrically active carrier loss of around 50%, from 8.1x1020 cm-3 down to 3.8x1020cm-3. Even multiple pulses with various energy densities at the same position were not able to improve electrical activation. However, there was some slight improvements of the sheet resistance in the sub melt regime, which needs to be confirmed in future experiments.

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Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing

Cited by 10 publications

References 25 publications

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

Atomistic Insights into Ultrafast SiGe Nanoprocessing

Nanosecond Laser Annealing of In-Situ Boron-Doped Ge Layers for Dopant Activation

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