Superconducting properties of noncentrosymmetric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Nb</mml:mi><mml:mrow><mml:mn>0.18</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Re</mml:mi><mml:mrow><mml:mn>0.82</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>thin films probed by transport and tunneling experiments

Cirillo, C.; Carapella, G.; Salvato, M.; Arpaia, Riccardo; Caputo, M.; Attanasio, C.

doi:10.1103/physrevb.94.104512

Cited by 26 publications

(27 citation statements)

References 64 publications

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“…The morphology and roughness of the film surface strongly affect its transport properties, like, for instance, the value of the resistivity. In the case of NbRe and NbReN structural characterization revealed that the films consist of small crystallites, which are responsible of disorder-dominated electrical conduction [6,8]. The AFM analysis presented in this work confirms this picture.…”

Section: Morphological Propertiessupporting

confidence: 72%

“…Recently, NbRe-based superconducting films were proposed for the realization of fast SNSPDs, namely NbRe [6,7] and NbReN [8]. In this respect, a detailed characterization of the films is useful to clarify if these two materials may indeed represent a solid alternative to the other well-established superconductors used in this field, such as NbN [10], NbTiN [11], or amorphous WSi [12].…”

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confidence: 99%

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Electrical Transport and Fluctuation Processes in NbRe and NbReN Ultrathin Films for Superconducting Electronics Applications

Barone

Cirillo

Carapella

et al. 2021

Preprint

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NbRe-based superconducting thin films recently received relevant interest in the field of low-temperature electronics. However, for these materials the electrical conduction mechanisms, in particular in the normal state, still need to be investigated in more detail. Here, NbRe and NbReN films of different thicknesses have been deposited on two different substrates, namely monocrystalline Si and SiO2 buffered Si. The films were characterized by DC electrical transport measurements. Moreover, a connection with the charge carriers fluctuation processes has been made by analyzing the electrical noise generated in the normal state region. Despite the films morphology seems not to be affected by the substrate used, a lower noise level has been found for the ones grown on SiO2, in particular for NbReN. From this study it emerges that both NbRe and NbReN ultrathin films are of very good quality, as far as the low-temperature electrical noise and conduction are concerned, with noise levels competitive with NbN. These results may further support the proposal of using these materials in a nanowire form in the field of superconducting electronics.

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Section: Morphological Propertiessupporting

confidence: 72%

mentioning

confidence: 99%

Electrical Transport and Fluctuation Processes in NbRe and NbReN Ultrathin Films for Superconducting Electronics Applications

Barone

Cirillo

Carapella

et al. 2021

Preprint

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“…Among NCS that are superconductor at ambient pressure, evidence of nodes in the superconducting energy gap has been obtained for Li 2 Pt 3 B 2,3 , Y 2 C 3 4 and CePt 3 Si 5,6 , though in the last one study of parity broken superconducting state is complicated by coexistence of antiferromagnetic order. Yet many other compounds, such as BiPd 7–10 , Nb 0.18 Re 0.82 11,12 , Re 3 W 13 , PbTaSe 2 14 exhibit fully open superconducting gap while some of them show evidence for multiband superconductivity 11,12 . Recently, the superconducting state of the NCS, Re 6 Zr with the α-Mn cubic structure 15 has called for particular attention.…”

Section: Introductionmentioning

confidence: 99%

Point contact Andreev reflection studies of a non-centro symmetric superconductor Re6Zr

Parab

Singh

Haram

et al. 2019

Sci Rep

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Re 6 Zr, a non-centrosymmetric superconductor is an interesting system as recent experimental evidence suggests that the superconducting state breaks time reversal symmetry. This implies a mixing of spin singlet-triplet states leading to a complex order parameter in this system. Here, we report point contact Andreev Reflection (PCAR) measurements on a single crystal of Re 6 Zr (superconducting transition temperature (T c ) = 6.78 K). We observe multiple gap features in the PCAR spectra which depends on the type of tip and contact. Spectral features appear at voltages 1.0 ± 0.1 mV, 0.75 ± 0.05 mV and 0.45 ± 0.1 mV suggesting that there are at least more than one band contributing to superconductivity. However, strong surface inter-band scattering is possibly responsible for the uncertainty in observing them together distinctly in a single contact in the PCAR measurements. Interestingly, the bulk gap (Δ = 1.95k B T c = 1.1 meV) is occasionally observed in PCAR spectra, mostly with ferromagnetic tips. The gap features associated with the other two smaller gaps disappear at the bulk T c . In addition, no anisotropy in the upper critical field was observed. Our results suggest an unconventional superconducting order in this compound: Multiband singlet states dominated by inter-band pairing which break the time reversal symmetry or singlet mixed with triplet states.

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“…Recently, NbRe-based superconducting films were proposed for the realization of fast SNSPDs, namely NbRe 6 , 7 and NbReN 8 . In this respect, a detailed characterization of the films is useful to clarify if these two materials may indeed represent a solid alternative to the other well-established superconductors used in this field, such as NbN 9 , NbTiN 10 , or amorphous WSi 11 .…”

Section: Introductionmentioning

confidence: 99%

Effect of the substrate on the electrical transport and fluctuation processes in NbRe and NbReN ultrathin films for superconducting electronics applications

Barone

Cirillo

Carapella

et al. 2022

Sci Rep

Self Cite

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NbRe-based superconducting thin films recently received relevant interest in the field of low-temperature electronics. However, for these materials the electrical conduction mechanisms, in particular in the normal state, still need to be investigated in more detail. Here, NbRe and NbReN films of different thicknesses have been deposited on two different substrates, namely monocrystalline Si and $$\text {SiO}_2$$ SiO 2 buffered Si. The films were characterized by DC electrical transport measurements. Moreover, a connection with the charge carriers fluctuation processes has been made by analyzing the electrical noise generated in the normal state region. Despite the films morphology seems not to be affected by the substrate used, a lower noise level has been found for the ones grown on $$\text {SiO}_2$$ SiO 2 , in particular for NbReN. From this study it emerges that both NbRe and NbReN ultrathin films are of very good quality, as far as the low-temperature electrical noise and conduction are concerned, with noise levels competitive with NbN. These results may further support the proposal of using these materials in a nanowire form in the field of superconducting electronics.

show abstract

Superconducting properties of noncentrosymmetricNb0.18Re0.82thin films probed by transport and tunneling experiments

Cited by 26 publications

References 64 publications

Electrical Transport and Fluctuation Processes in NbRe and NbReN Ultrathin Films for Superconducting Electronics Applications

Electrical Transport and Fluctuation Processes in NbRe and NbReN Ultrathin Films for Superconducting Electronics Applications

Point contact Andreev reflection studies of a non-centro symmetric superconductor Re6Zr

Effect of the substrate on the electrical transport and fluctuation processes in NbRe and NbReN ultrathin films for superconducting electronics applications

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