Superconducting properties of the SnTe-PbTe system doped with indium

Bushmarina, G.S.; Drabkin, I. A.; Mashovets, D. V.; Parfeniev, R. V.; Шамшур, Д. В.; Shachov, M.A.

doi:10.1016/0921-4526(91)90389-v

Cited by 23 publications

(13 citation statements)

References 2 publications

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“…This is characteristic of a resonant level type dopant, as has been discussed in the thermoelectric and related literature. 12,[14][15][16] The resonant aspect of this impurity state is also apparent in the Density of States. Fig.…”

Section: Electronic Structurementioning

confidence: 99%

“…Our experimental investigations have revealed new details of the electronic behavior of the system, leading us to support a picture where Indium is not a trivial dopant, and to propose that there is a crossover in behavior near 10% In doping. Motivated by the experiments, analysis of our electronic band structure calculations indicates that unlike the case for other monovalent dopants, the In(s) states in Sn 1−x In x Te are prevalent at the Fermi level, supporting a frequently discussed resonant-level-type model [14][15][16] (along with the analogous Tl-doped PbTe system 12 ) in which Indium has what is effectively a mixed oxidation state in the system, i.e. that it has partially filled 5s states and thus is formally neither In 1+ nor In 3+ .…”

Section: Introductionmentioning

confidence: 99%

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Anomalous composition dependence of the superconductivity in In-doped SnTe

et al. 2016

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We report a reinvestigation of superconducting Sn1−xInxTe at both low and high In doping levels. Considering the system over a broad composition range in a single study allows us to characterize a significant change in the properties as a function of x : the system evolves from a weakly coupled p-type superconductor to a strongly coupled n-type superconductor with increasing indium content. Hall Effect measurements show that the carrier density does not vary monotonically with Indium content; a change from p-type to n-type is observed near 10% In-doping. This is contrary to expectations dictating that In should be a p-type dopant in semiconducting SnTe because it has one less valance electron than Sn. A crystallographic search for point defects at high x indicates that the material remains ideal NaCl-type over a wide composition range. Density functional theory calculations for In-doped SnTe support a picture where In does not act as a trivial hole dopant, but instead forms a distinct, partly filled In 5s -Te 5p hybridized state centered around EF , which is very different from what is seen for other nominal hole dopants such as Na, Ag, and vacant Sn sites.

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Section: Electronic Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Anomalous composition dependence of the superconductivity in In-doped SnTe

et al. 2016

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“…The situation becomes more complicated for an Indium concentration above 10%, where the sign of the Hall resistivity changes [38], suggesting the possibility that two types of carriers are simultaneously present. In fact, in indium-doped PbTe and Pb 1−x Sn x Te, In-doping results in far less than one electron per impurity atom, which suggests In doping also introduces an impurity band that causes the effect of pinning the Fermi level [58,59].…”

Section: Bulk Band Structurementioning

confidence: 99%

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

Zhong

Schneeloch

et al. 2017

Crystals

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Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1−x Sn x ) 1−y In y Te. For samples with a tin concentration x ≤ 50%, the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ∼2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with ∼6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels, superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.

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“…Earlier studies on polycrystalline samples of (Pb 1−z Sn z ) 1−x In x Te investigated the dependence of T c and H c2 in the concentration ranges 0.4 z 1 and 0.03 x 0.2 [19][20][21]. The maximum T c was found for z = 0.5; however, the solubility limit in these polycrystalline samples was reached by x ∼ 0.2.…”

mentioning

confidence: 98%

Superconductivity induced by In substitution into the topological crystalline insulator Pb0.5 Sn0.5Te

et al. 2014

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Indium substitution turns the topological crystalline insulator (TCI) Pb 0.5 Sn 0.5 Te into a possible topological superconductor. To investigate the effect of the indium concentration on the crystal structure and superconducting properties of (Pb 0.5 Sn 0.5 ) 1−x In x Te, we have grown high-quality single crystals using a modified floating-zone method and have performed systematic studies for indium content in the range 0 x 0.35. We find that the single crystals retain the rocksalt structure up to the solubility limit of indium (x ∼ 0.30). Experimental dependencies of the superconducting transition temperature (T c ) and the upper critical magnetic field (H c2 ) on the indium content x have been measured. The maximum T c is determined to be 4.7 K at x = 0.30, with μ 0 H c2 (T = 0) ≈ 5 T.

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Superconducting properties of the SnTe-PbTe system doped with indium

Cited by 23 publications

References 2 publications

Anomalous composition dependence of the superconductivity in In-doped SnTe

Anomalous composition dependence of the superconductivity in In-doped SnTe

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

Superconductivity induced by In substitution into the topological crystalline insulator Pb0.5 Sn0.5Te

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