2002
DOI: 10.1016/s0921-4534(01)01121-2
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Superconductivity in Sn films on InSb() taking account of the film morphology and structure

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Cited by 6 publications
(10 citation statements)
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“…The coherence length ξ(0) can be estimated as 420±20 Å using a relation H c2 (0) = Φ 0 /(2πξ(0) 2 ), where Φ 0 (= 2.0678×10 −7 Gauss cm 2 ) is a fluxoid. Note that our value of H c2 (0) for Sn-MG is on the same order as that of Sn films grown on an InSb (110) surface [19]. The value of H c2 (0) strongly depends on the thickness t of the Sn films: H c2 (0) = 3160 Oe for t = 420 Å and 2540 Oe for t = 2540 Å for H parallel to the Sn film.…”
Section: H-t Phase Diagrammentioning
confidence: 51%
See 1 more Smart Citation
“…The coherence length ξ(0) can be estimated as 420±20 Å using a relation H c2 (0) = Φ 0 /(2πξ(0) 2 ), where Φ 0 (= 2.0678×10 −7 Gauss cm 2 ) is a fluxoid. Note that our value of H c2 (0) for Sn-MG is on the same order as that of Sn films grown on an InSb (110) surface [19]. The value of H c2 (0) strongly depends on the thickness t of the Sn films: H c2 (0) = 3160 Oe for t = 420 Å and 2540 Oe for t = 2540 Å for H parallel to the Sn film.…”
Section: H-t Phase Diagrammentioning
confidence: 51%
“…Note that our value of H c2 (0) for Sn-MG is on the same order as that of Sn films grown on an InSb (110) surface [19]. The value of H c2 (0) strongly depends on the thickness t of the Sn films: H c2 (0) = 3160 Oe for t = 420Å and 2540 Oe for t = 2540Å for H parallel to the Sn film.…”
Section: H-t Phase Diagrammentioning
confidence: 51%
“…α-Sn contains multiple topological insulator and semimetal phases that appear for different thicknesses 2 , levels of strain 4 and doping levels 5,6 . Another phase of Sn, tetragonal β -Sn is a superconducting metal 7 . Devices made of β -Sn/InSb structures exhibit properties such as hard induced gap and parity stability which is attractive for the investigation of topological superconductors, as well as for hybrid superconductor-semiconductor devices for quantum information processing 3 .…”
Section: Introductionmentioning
confidence: 99%
“…Tin is a common group IV element used in a broad range of industrial applications including electronic circuits, optoelectronic devices, energy storage devices, and coating for commercial products. Recently, interest was further triggered with the promise of exploring exotic topological phases with Sn–semiconductor hybrids. However, the type of topology depends on which of the two major allotropes (α-Sn or β-Sn) is present. Hybridizing the semimetallic, cubic α-Sn phase, , , with semiconductors such as InSb (111) or (100) induces lattice mismatch-related strain fields. The resulting broken cubic symmetry can lead to topological insulator behavior. ,,, Conversely, metallic β-Sn is a comparatively dense body-centered tetragonal structure and exhibits superconductivity with a bulk critical temperature of 3.7 K. , , Hence, hybrids of β-Sn and one-dimensional semiconductors with strong spin–orbit interaction, such as InSb or InAs, may exhibit topological superconductivity in the presence of magnetic fields. …”
mentioning
confidence: 99%
“…Hybridizing the semimetallic, cubic α-Sn phase, , , with semiconductors such as InSb (111) or (100) induces lattice mismatch-related strain fields. The resulting broken cubic symmetry can lead to topological insulator behavior. ,,, Conversely, metallic β-Sn is a comparatively dense body-centered tetragonal structure and exhibits superconductivity with a bulk critical temperature of 3.7 K. , , Hence, hybrids of β-Sn and one-dimensional semiconductors with strong spin–orbit interaction, such as InSb or InAs, may exhibit topological superconductivity in the presence of magnetic fields. …”
mentioning
confidence: 99%