2Charge density wave (CDW) transitions are a frequent occurrence in transition metal chalcogenides due to their low structural dimensionality. Layered MX 2 compounds and chain-based MX 3 compounds, where M is a group 4 or 5 metal and X = S, Se, or Te, are the best known examples [1][2][3][4][5][6][7]. These transitions arise to allow electronic systems to minimize their energy by removing electronic states at the Fermi level. This is achieved by introducing a new structural periodicity at the Fermi wave vector, inducing a band gap. Superconductivity and the CDW state are two very different cooperative electronic phenomena, and yet both occur due to Fermi surface instabilities and electron-phonon coupling. A number of CDW-bearing materials are also superconducting [8][9][10][11][12][13], and the idea that superconductivity and CDW states are competing electronic states at low temperatures is one of the fundamental concepts of condensed matter physics. Surprisingly, no system has yet been reported in which the emergence of a superconducting state after a charge density wave state has been suppressed via doping has been studied in detail: a transition that implies a deep connection between the two states, i.e., that the same electrons are participating in both transitions. TiSe 2 was one of the first CDW-bearing compounds known, and is also one of the most frequently studied as the nature of its CDW transition has been controversial for decades. The CDW transition, at approximately 200 K, is to a state with a commensurate (2a,2a,2c) wavevector without an intermediate incommensurate phase [3,16,17]. The commensurate CDW wavevector and electronic structure calculations indicate that, unlike the case in most materials, the CDW in TiSe 2 is not driven by Fermi surface nesting. The normal state is presently believed to be either a semimetal or a semiconductor with a small indirect gap [3, 16, 18 -22] (Fig. 1a, inset). This results in a systematic expansion of the unit cell with Cu content in Cu x TiSe 2 , as evidenced by the lattice parameters shown in Fig. 1a. The expansion of the cell parameters is maintained up to x = 0.11. For higher Cu contents, both a and c remain unchanged from their value at x = 0.11. It can therefore be concluded that the solubility limit for Cu in TiSe 2 is x = 0.11 ± 0.01.Of particular interest is the evolution of the charge density wave with Cu doping.Electron and X-ray diffraction studies of pure TiSe 2 at low temperatures show the presence of reflections corresponding to the basic trigonal structure and also the 2a, 2c superstructure reflections associated with the CDW state [3,19]. increases with Cu content. This suggests that the Cu doping introduces carriers into the conduction band in TiSe 2 , increasing the electronic density of states and therefore the Pauli paramagnetism. This is further confirmed by specific heat measurements, described below. A drop in the susceptibility of pure TiSe 2 is seen as the temperature is lowered below the CDW transition at 200 K, consistent with th...