Supercooling of nanoscale Ga drops with controlled impurity levels

Sutter, Eli; Sutter, Peter; Uccelli, Emanuele; Morral, Anna Fontcuberta i

doi:10.1103/physrevb.84.193303

Cited by 13 publications

(14 citation statements)

References 31 publications

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“…A similar behavior was also observed in Al-Zn alloys following the minor addition of Cr [61]. In a study of the undercooling behavior of nanosize Ga drops, minor additions of Si were observed to promote the crystallization of metastable phases and it was suggested that structural motifs other than icosahedral may be present in undercooled liquids that can act to catalyze metastable structures [62,63]. Similarly, in glass forming Pd alloys structural investigation of flux treated samples revealed a densification of the undercooled liquid that was manifested in an increased resistance to crystallization compared to samples without flux treatment [64].…”

Section: Environment Effects On Nucleation Undercoolingsupporting

confidence: 52%

Melt undercooling and nucleation kinetics

Perepezko

Wilde

2016

Current Opinion in Solid State and Materials Science

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a b s t r a c tWhile melt undercooling is often observed during solidification the control of undercooling and nucleation is difficult due to the numerous possible heterogeneous sites present in even high purity melts. The identification of active nucleation sites has been a continuing challenge that requires developing well planned experimentation. In samples with well-defined and controlled undercooling, the identification can be established for a number of the active sites and mechanisms that can act to catalyze nucleation. The sites and mechanisms that have been identified involve primary phases developed during cooling of alloy melts, liquid-added particle interfaces being modified (e.g. by adsorption or reaction) creating a particle type independent nucleation potency, dissolved impurities precipitating out of the melt at high undercooling or acting to alter local atomic arrangements in the melt to catalyze nucleation and nucleation sites resulting from residual solid preserved in cavities in inclusions or surface coatings. Recent advances in clarifying the structure of liquids reveal local atomic arrangements such as short range order, medium range order and cluster structures, but the role of these local heterogeneities on the undercooling and crystallization behavior is incompletely understood at present.

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Section: Environment Effects On Nucleation Undercoolingsupporting

confidence: 52%

Melt undercooling and nucleation kinetics

Perepezko

Wilde

2016

Current Opinion in Solid State and Materials Science

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“…Upon melting the contrast of the In becomes homogeneous and uniform, characteristic of the liquid state (Fig. 3(c)), 7,15 i.e., above 160 C the particles at the tips of the Si NWs transform into liquid In drops held in solid In 2 O 3 containers. The absence of crystalline In facilitates measuring the In 2 O 3 thickness at the free surface, which we find uniformly 3.5-4.0 nm thin for all surveyed particles.…”

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confidence: 97%

Enhanced oxidation of nanoscale In particles at the interface with a Si nanowire

Sutter

2012

Applied Physics Letters

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We investigate the room-temperature oxidation of In nanoparticles at the tips of Si nanowires. This geometry allows a direct comparison of oxidation at the gas-indium interface and the interface to the Si nanowire. While the In2O3 at the free surface is polycrystalline with small limiting thickness, the oxidation at the nanoscale interface to Si gives rise to single crystalline In2O3 with a tenfold-enhanced thickness. Our results demonstrate interfacial modifications of oxidation at the nanoscale, which need to be considered in scaling electronic devices, and which can become a route for forming high-quality semiconductor-oxide interfaces in nanostructured materials, such as nanowires.

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“…1a) contained weak responses for α‐Mn and metastable β‐Ga phase. The formation of the β‐Ga phase and other metastable polymorphous modifications of Ga are related to undercooling phenomena 25 or size effect 26. After annealing at 300 °C, the responses from Ga and Mn vanished and features corresponding to a cubic ϕ‐Ga 7.7 Mn 2.3 phase developed (Fig.…”

Section: Resultsmentioning

confidence: 99%

Solid‐state formation of ferromagnetic δ‐Mn_0.6Ga_0.4 thin films with high rotatable uniaxial anisotropy

Myagkov

Жигалов

Быкова

et al. 2012

Physica Status Solidi (b)

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Solid‐state reactions in Ga/Mn polycrystalline films of the composition 1 Ga:3 Mn were experimentally investigated. Our X‐ray study showed that the formation of the Ga/Mn → (250 °C) ϕ‐Ga7.7Mn2.3 → (350 °C) δ‐Mn0.6Ga0.4 phase sequence occurs when the annealing temperature is increased to 400 °C. δ‐Mn0.6Ga0.4 samples were found to have high rotatable uniaxial anisotropy. We also showed that magnetic fields with coercivities above H > HC = 8.3 kOe can be used to orient the easy anisotropy axis in any spatial direction while taking the angle of the lag into account.

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Supercooling of nanoscale Ga drops with controlled impurity levels

Cited by 13 publications

References 31 publications

Melt undercooling and nucleation kinetics

Melt undercooling and nucleation kinetics

Enhanced oxidation of nanoscale In particles at the interface with a Si nanowire

Solid‐state formation of ferromagnetic δ‐Mn_0.6Ga_0.4 thin films with high rotatable uniaxial anisotropy

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Supercooling of nanoscale Ga drops with controlled impurity levels

Cited by 13 publications

References 31 publications

Melt undercooling and nucleation kinetics

Melt undercooling and nucleation kinetics

Enhanced oxidation of nanoscale In particles at the interface with a Si nanowire

Solid‐state formation of ferromagnetic δ‐Mn0.6Ga0.4 thin films with high rotatable uniaxial anisotropy

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Solid‐state formation of ferromagnetic δ‐Mn_0.6Ga_0.4 thin films with high rotatable uniaxial anisotropy