Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

Barua, Dipak; Gougousi, Theodosia; Young, Erin D.; Parsons, Gregory N.

doi:10.1063/1.2181651

Cited by 14 publications

(10 citation statements)

References 11 publications

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“…ALD processes have been run over a wide range of operation pressures from ultrahigh vacuum to atmospheric, and even supercritical fluid has been demonstrated (77). ALD processes have been run over a wide range of operation pressures from ultrahigh vacuum to atmospheric, and even supercritical fluid has been demonstrated (77).…”

Section: Conventional Ald Reactorsmentioning

confidence: 99%

Atomic Layer Deposition

Leskelä

Niinistö

Ritala

2014

Comprehensive Materials Processing

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Section: Conventional Ald Reactorsmentioning

confidence: 99%

Atomic Layer Deposition

Leskelä

Niinistö

Ritala

2014

Comprehensive Materials Processing

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“…Prompted by the high volume of solvents used in the various stages of the fabrication process and increasingly stringent regulations on the use and disposal of chemicals, integrated-circuit (IC) manufacturing companies are striving to find environmentally benign replacements. Supercritical carbon dioxide (scCO 2 ) is a potential alternative solvent for use in IC manufacturing processes, such as pre-cleaning, photoresist stripping, cleaning post-etching and post-ashing residues, oxide and copper etching, low-k film repair and pore sealing, pattern development, metal deposition, and drying [1][2][3][4][5][6][7]. Carbon dioxide is nonpolar, nontoxic, inexpensive, and vastly available.…”

Section: Introductionmentioning

confidence: 99%

High-pressure phase equilibria for chlorosilane+carbon dioxide mixtures

Vyhmeister

Muscat

Suleiman

et al. 2008

Fluid Phase Equilibria

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“…10 Next, we investigated the STO SCFD using the same Sr͑tmhd͒ 2 and Ti͑mpd͒͑tmhd͒ 2 precursors and H 2 O 2 ͑30% in water͒ as an oxidant. [22][23][24][25] Generally, H 2 O is immiscible with supercritical fluid CO 2 . 21,24 Previously, various oxides, including ZrO 2 , MnO x , RuO x , and Al 2 O 3 , were deposited using H 2 O 2 as an oxidant.…”

mentioning

confidence: 99%

“…21,24 Previously, various oxides, including ZrO 2 , MnO x , RuO x , and Al 2 O 3 , were deposited using H 2 O 2 as an oxidant. 25 Thus, in the current experiments, H 2 O 2 was used as an oxidant for the STO growth. The STO thin films were deposited at growth temperature ͑Ts͒ range from 80 to 380°C and pressure range from 70 to 280 atm.…”

mentioning

confidence: 99%

Supercritical Fluid Deposition of Conformal SrTiO[sub 3] Films with Composition Uniformity in Nanocontact Holes

Lee¹,

Son²,

Lee³

et al. 2009

Electrochem. Solid-State Lett.

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SrTiO 3 with a high dielectric constant is considered a promising capacitor dielectric for dynamic random access memory. Until now, a SrTiO 3 deposition with compositional uniformity and perfect conformality inside high-aspect nanoscale holes has been difficult by chemical vapor deposition ͑CVD͒ and atomic layer deposition ͑ALD͒. In this study, we report a supercritical fluid deposition ͑SCFD͒ of SrTiO 3 . Compared to CVD SrTiO 3 , the SCFD SrTiO 3 showed perfect conformality and compositional uniformity inside nanosize holes. From these results, the SCFD is expected to be a solution for the stoichiometry and conformality issues of the CVD and ALD SrTiO 3 .SrTiO 3 ͑STO͒ is considered as a promising dielectric material for dynamic random access memory capacitors due to its high dielectric constant up to 300, low leakage current, and good chemical stability. 1-7 Moreover, complicated three-dimensional ͑3D͒ device structures with device downscaling to sub-40 nm have emerged to increase integration density. 8,9 Hereupon, a highly conformal deposition technique is an essential requirement for nanoscale device fabrications. One widely studied deposition technique for STO thin films is metallorganic chemical vapor deposition ͑MOCVD͒. 10-13 Although relatively good composition controllability can be achievable by MOCVD, it is difficult to obtain highly conformal deposition on nanoscale 3D structures. In addition, compositional variation in deep trenches or nanoholes is also a significant problem. For example, energy-dispersive spectroscopy ͑EDS͒ analysis exhibited that the Sr/Ti composition ratio of MOCVD STO films continuously decreases from top to bottom of the nanoholes. 10 The nonuniform Sr/Ti ratio of the MOCVD STO films inside nanoholes was attributed to the different deposition characteristics of Ti and Sr precursors, depending on arriving rates and sticking coefficients of the precursors during MOCVD. [10][11][12] Atomic layer deposition ͑ALD͒ was suggested as an alternative technique for MOCVD STO. 14-17 Generally, ALD enables a deposition with atomic thickness uniformity, high conformality in nanoscale holes and trenches, and large-area uniformity. 18 In spite of these promising aspects, previous studies on ALD of STO reported that various problems exist such as lack of volatile precursors and difficulty in controlling stoichiometry. 14-16 Although ALD STO showed better results in terms of thickness and chemical conformality than MOCVD STO, the Sr/Ti ratio along the 3D contact holes was not uniform and sensitive to growth parameters such as growth temperatures and precursor injection rates. 15,16 Recently, supercritical fluid deposition ͑SCFD͒ emerged as a promising thin-film deposition method for deposition on nanoscale 3D structures due to its excellent conformality and gap-filling properties. 19-21 Especially, SCFD has merits of chemical vapor deposition ͑CVD͒ and ALD such as large-area process for mass production, high deposition rate, and high conformality. 19-21 The supercritical fluid CO 2 has liquidlike...

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Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

Cited by 14 publications

References 11 publications

Atomic Layer Deposition

Atomic Layer Deposition

High-pressure phase equilibria for chlorosilane+carbon dioxide mixtures

Supercritical Fluid Deposition of Conformal SrTiO[sub 3] Films with Composition Uniformity in Nanocontact Holes

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